A △∑ fractional-N frequency synthesizer fabricated in a 130 nm CMOS technology is presented for the application of an FM tuner. A low noise filter, occupying a small die area and decreasing the output noise, is inte...A △∑ fractional-N frequency synthesizer fabricated in a 130 nm CMOS technology is presented for the application of an FM tuner. A low noise filter, occupying a small die area and decreasing the output noise, is integrated on a chip. A quantization noise suppression technique, using a reduced step size of the frequency divider, is also adopted. The proposed synthesizer needs no off-chip components and occupies an area of 0.7 mm2. The in-band phase noise （from 10 to 100 kHz） below -108 dBc/Hz and out-of-band phase noise of -122.9 dBc/Hz （at 1 MHz offset） are measured with a loop bandwidth of 200 kHz. The quantization noise suppression technique reduces the in-band and out-of band phase noise by 15 dB and 7 dB respectively. The integrated RMS phase error is no more than 0.48°. The proposed synthesizer consumes a total power of 7.4 mW and the frequency resolution is less than 1 Hz.展开更多
A continuous-time ∑△ modulator with a third-order loop filter and a 3-bit quantizer is realized. The modulator is robust to the excess loop delay, clock jitter, and RC product variations. When designing the integra...A continuous-time ∑△ modulator with a third-order loop filter and a 3-bit quantizer is realized. The modulator is robust to the excess loop delay, clock jitter, and RC product variations. When designing the integrator, an op-amp with novel GBW extension structure, improving the linearity of the loop filter, is adopted. The prototype chip is designed in a 130 nm CMOS technology, targeting FM radio applications. The experimental results show that the prototype modulator achieves a 72 dB dynamic range and a 70.7 dB signal to noise and distortion ratio over a 500 kHz bandwidth with a 26 MHz clock, consuming 2.52 mW power from a 1.2 V supply.展开更多
A fully integrated △∑ fractional-N frequency synthesizer fabricated in a 55 nm CMOS technology is presented for the application of IEEE 802.11b/g wireless local area network （WLAN） transceivers. A low noise filter...A fully integrated △∑ fractional-N frequency synthesizer fabricated in a 55 nm CMOS technology is presented for the application of IEEE 802.11b/g wireless local area network （WLAN） transceivers. A low noise filter, occupying a small die area, whose power supply is given by a high PSRR and low noise LDO regulator, is integrated on chip. The proposed synthesizer needs no off-chip components and occupies an area of 0.72 mm^2excluding PAD. Measurement results show that in all channels, the phase noise of the synthesizer achieves -99 dBc/Hz and -119 dBc/Hz in band and out of band respectively with a reference frequency of 40 MHz and a loop bandwidth of 200 kHz. The integrated RMS phase error is no more than 0.6°. The proposed synthesizer consumes a total power of 15.6 mW.展开更多
文摘A △∑ fractional-N frequency synthesizer fabricated in a 130 nm CMOS technology is presented for the application of an FM tuner. A low noise filter, occupying a small die area and decreasing the output noise, is integrated on a chip. A quantization noise suppression technique, using a reduced step size of the frequency divider, is also adopted. The proposed synthesizer needs no off-chip components and occupies an area of 0.7 mm2. The in-band phase noise （from 10 to 100 kHz） below -108 dBc/Hz and out-of-band phase noise of -122.9 dBc/Hz （at 1 MHz offset） are measured with a loop bandwidth of 200 kHz. The quantization noise suppression technique reduces the in-band and out-of band phase noise by 15 dB and 7 dB respectively. The integrated RMS phase error is no more than 0.48°. The proposed synthesizer consumes a total power of 7.4 mW and the frequency resolution is less than 1 Hz.
文摘A continuous-time ∑△ modulator with a third-order loop filter and a 3-bit quantizer is realized. The modulator is robust to the excess loop delay, clock jitter, and RC product variations. When designing the integrator, an op-amp with novel GBW extension structure, improving the linearity of the loop filter, is adopted. The prototype chip is designed in a 130 nm CMOS technology, targeting FM radio applications. The experimental results show that the prototype modulator achieves a 72 dB dynamic range and a 70.7 dB signal to noise and distortion ratio over a 500 kHz bandwidth with a 26 MHz clock, consuming 2.52 mW power from a 1.2 V supply.
文摘A fully integrated △∑ fractional-N frequency synthesizer fabricated in a 55 nm CMOS technology is presented for the application of IEEE 802.11b/g wireless local area network （WLAN） transceivers. A low noise filter, occupying a small die area, whose power supply is given by a high PSRR and low noise LDO regulator, is integrated on chip. The proposed synthesizer needs no off-chip components and occupies an area of 0.72 mm^2excluding PAD. Measurement results show that in all channels, the phase noise of the synthesizer achieves -99 dBc/Hz and -119 dBc/Hz in band and out of band respectively with a reference frequency of 40 MHz and a loop bandwidth of 200 kHz. The integrated RMS phase error is no more than 0.6°. The proposed synthesizer consumes a total power of 15.6 mW.
