Semiconductor photocatalysts are extensively applied in environmental treatment and energy conversion.However,one of their major disadvantages is their relatively low photocatalytic performance owing to the recombinat...Semiconductor photocatalysts are extensively applied in environmental treatment and energy conversion.However,one of their major disadvantages is their relatively low photocatalytic performance owing to the recombination of generated electron-hole pairs.The presence of the phase junction is an effective way to promote the photocatalytic activity by increasing the separation efficiency of the electron-hole pairs.Accordingly,extensive research has been conducted on the design of phase junctions of photocatalysts to improve their charge transfer properties and efficiencies.Therefore,for the design of an appropriate phase junction and the understanding of the mechanism of electron-hole separation,the development of the photocatalytic phase junction,including the preparation methods of the heterogeneous materials,is tremendously important and helpful.Herein,the commonly used,externally induced phase transformation fabrication techniques and the primary components of the semiconductors are reviewed.Future directions will still focus on the design and optimization of the phase junction of photocatalytic materials according to the phase transition with higher efficiencies for broadband responses and solar energy utilization.Additionally,the most popular phase transformation fabrication techniques of phase junctions are briefly reviewed from the application viewpoint.展开更多
石墨相氮化碳(g-C_3N_4)半导体材料具有无毒、带隙小(2.7 e V)、在太阳光谱中能较好吸收可见光的优点,是近年来迅速发展的新型可见光催化剂.然而,纯的g-C_3N_4还存在可见光捕获能力有限、电荷载流子易重组和比表面积小的缺点,其光催化...石墨相氮化碳(g-C_3N_4)半导体材料具有无毒、带隙小(2.7 e V)、在太阳光谱中能较好吸收可见光的优点,是近年来迅速发展的新型可见光催化剂.然而,纯的g-C_3N_4还存在可见光捕获能力有限、电荷载流子易重组和比表面积小的缺点,其光催化效率不够理想,离实际工业大规模应用还有一段距离.文中总结了g-C_3N_4的合成方法.阐述了进一步提高g-C_3N_4活性的方法,包括孔道和比表面积的调控、贵金属沉积、非金属元素掺杂、半导体复合形成复合材料等.分析了g-C_3N_4基光催化剂在降解有机污染物、光解水制氢、还原六价铬三方面的研究进展,并对g-C_3N_4基光催化剂的研究方向进行了展望.展开更多
基金supported by the National Natural Science Foundation of China(21707055,21567008,21607064)Program of Qingjiang Excellent Young Talents,Jiangxi University of Science and Technology,Program of 5511 Talents in Scientific and Technological Innovation of Jiangxi Province(20165BCB18014)+3 种基金Academic and Technical Leaders of the Main Disciplines in Jiangxi Province(20172BCB22018)Jiangxi Province Natural Science Foundation(20161BAB203090,20181BAB213010,20181BAB203018)Young Science Foundation of Jiangxi Province Education Office(GJJ160671)Open Project Program of the State Key Laboratory of Photocatalysis on Energy and Environment(SKLPEE-KF201712)in Fuzhou University基金来源:国家自然科学基金(21707055,21567008,21607064)~~
文摘Semiconductor photocatalysts are extensively applied in environmental treatment and energy conversion.However,one of their major disadvantages is their relatively low photocatalytic performance owing to the recombination of generated electron-hole pairs.The presence of the phase junction is an effective way to promote the photocatalytic activity by increasing the separation efficiency of the electron-hole pairs.Accordingly,extensive research has been conducted on the design of phase junctions of photocatalysts to improve their charge transfer properties and efficiencies.Therefore,for the design of an appropriate phase junction and the understanding of the mechanism of electron-hole separation,the development of the photocatalytic phase junction,including the preparation methods of the heterogeneous materials,is tremendously important and helpful.Herein,the commonly used,externally induced phase transformation fabrication techniques and the primary components of the semiconductors are reviewed.Future directions will still focus on the design and optimization of the phase junction of photocatalytic materials according to the phase transition with higher efficiencies for broadband responses and solar energy utilization.Additionally,the most popular phase transformation fabrication techniques of phase junctions are briefly reviewed from the application viewpoint.
文摘石墨相氮化碳(g-C_3N_4)半导体材料具有无毒、带隙小(2.7 e V)、在太阳光谱中能较好吸收可见光的优点,是近年来迅速发展的新型可见光催化剂.然而,纯的g-C_3N_4还存在可见光捕获能力有限、电荷载流子易重组和比表面积小的缺点,其光催化效率不够理想,离实际工业大规模应用还有一段距离.文中总结了g-C_3N_4的合成方法.阐述了进一步提高g-C_3N_4活性的方法,包括孔道和比表面积的调控、贵金属沉积、非金属元素掺杂、半导体复合形成复合材料等.分析了g-C_3N_4基光催化剂在降解有机污染物、光解水制氢、还原六价铬三方面的研究进展,并对g-C_3N_4基光催化剂的研究方向进行了展望.
