Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipatio...Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.展开更多
Pumped by a frequency-doubled Nd：YAG laser, 10-Hz repetition rate, 320-mJ pump energy, and 5.1-ns pulse width, a liquid Raman laser using acetone as the Raman shifting medium has been established. The residual pump l...Pumped by a frequency-doubled Nd：YAG laser, 10-Hz repetition rate, 320-mJ pump energy, and 5.1-ns pulse width, a liquid Raman laser using acetone as the Raman shifting medium has been established. The residual pump laser pulse and the generated Stokes pulse are directed to a DCM dye cell for energy enhancement of the Stokes pulse. The Raman laser system is capable to produce a laser pulse at wavelength 630nm, with single pulse energy of 120md, peak power of 70MW and an average power of 1200mW. The energy conversion efficiency is 37.5%, or equivalently a quantum efficiency of 44.5%.展开更多
基金This work was supported by a grant fromthe Research Grants Council of the Hong Kong Special Administrative Region,China(Pro-ject No.CityU1219/01P) a grant from CityU(Project No.7001188)Ambient NO2pollutant concentration fromthe Hong Kong Environmental Protection Department is also acknowledged.
文摘Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.
基金Supported by the Research Grants Council of the Hong Kong Special Administrative Region of China under Grant No City U 1219/01P, the City University of Hong Kong under Grant No 7001188, and the National Natural Science Foundation of China under Grant No 60478044.
文摘Pumped by a frequency-doubled Nd：YAG laser, 10-Hz repetition rate, 320-mJ pump energy, and 5.1-ns pulse width, a liquid Raman laser using acetone as the Raman shifting medium has been established. The residual pump laser pulse and the generated Stokes pulse are directed to a DCM dye cell for energy enhancement of the Stokes pulse. The Raman laser system is capable to produce a laser pulse at wavelength 630nm, with single pulse energy of 120md, peak power of 70MW and an average power of 1200mW. The energy conversion efficiency is 37.5%, or equivalently a quantum efficiency of 44.5%.
