2006年5月至2006年9月,我科对经胸部 X 线片和(或)胸部 CT 肋骨三维重建检查确诊的8例多发性肋骨骨折患者施行肋骨固定钉内固定术,术后患者呼吸痛明显减轻,胸廓畸形恢复,呼吸功能明显改善。表明肋骨固定钉在多发性肋骨骨折手术治疗中操...2006年5月至2006年9月,我科对经胸部 X 线片和(或)胸部 CT 肋骨三维重建检查确诊的8例多发性肋骨骨折患者施行肋骨固定钉内固定术,术后患者呼吸痛明显减轻,胸廓畸形恢复,呼吸功能明显改善。表明肋骨固定钉在多发性肋骨骨折手术治疗中操作简便,临床效果好。展开更多
Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of ...Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.展开更多
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.51972319,52002386,and 52072183)the Science and Technology Commission of Shanghai Municipality(No.19520744400)the Shanghai Science and Technology Commission(No.20511107400)。
文摘Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.
