We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balan...We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.展开更多
Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the samp...Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal,indicating the improved optical property.Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface.The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping.The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain.To further increase the relaxation degree,a lower mismatch grading rate and composition ＂overshoot＂ are suggested.展开更多
基金Supported by the National Key Research and Development Program of China(2016YFB0402400)National Natural Science Foundation of China(61775228,61675225,and 61605232)the Shanghai Rising-Star Program(17QA1404900)
基金Supported by the National Key Research and Development Program of China(2017YFB0405300,2016YFB0402400)National Natural Science Foundation of China(61605232,61675225,61775228)the Shanghai Rising-Star Program(17QA1404900)
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402400the National Basic Research Program of China under Grant No 2014CB643900+1 种基金the National Natural Science Foundation of China under Grant Nos 61775228,61605232,61675225 and 61334004the Shanghai Rising-Star Program under Grant No 17QA1404900
文摘We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.
基金Project supported by the National Basic Research Program of China(No.2012CB619202)the National Natural Science Foundation of China(Nos.61275113,61204133)the Founding of CAS Key Laboratory of Infrared Imaging Materials and Detectors
文摘Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal,indicating the improved optical property.Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface.The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping.The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain.To further increase the relaxation degree,a lower mismatch grading rate and composition ＂overshoot＂ are suggested.
