A wideband on-chip millimeter-wave patch antenna in 0.18 μm CMOS with a low-resistivity （10 Ω.cm） silicon substrate is presented. The wideband is achieved by reducing the Q factor and exciting the high-order radia...A wideband on-chip millimeter-wave patch antenna in 0.18 μm CMOS with a low-resistivity （10 Ω.cm） silicon substrate is presented. The wideband is achieved by reducing the Q factor and exciting the high-order radiation modes with size optimization. The antenna uses an on-chip top layer metal as the patch and a probe station as the ground plane. The on-chip ground plane is connected to the probe station using the inner connection structure of the probe station for better performance. The simulated S11 is less than -10 dB over 46-95 GHz, which is well matched with the measured results over the available 40-67 GHz frequency range from our measurement equipment. A maximum gain of-5.55 dBi with 4% radiation efficiency at a 60 GHz point is also achieved based on Ansofi HFSS simulation. Compared with the current state-of-the-art devices, the presented antenna achieves a wider bandwidth and could be used in wideband millimeter-wave communication and image applications.展开更多
基金supported by the National Science and Technology Major Projects of China(No.2012ZX03004007)the National Natural Science Foundation of China(Nos.61020106006,61076029,61222405,JCYJ20120616142625998)
文摘A wideband on-chip millimeter-wave patch antenna in 0.18 μm CMOS with a low-resistivity （10 Ω.cm） silicon substrate is presented. The wideband is achieved by reducing the Q factor and exciting the high-order radiation modes with size optimization. The antenna uses an on-chip top layer metal as the patch and a probe station as the ground plane. The on-chip ground plane is connected to the probe station using the inner connection structure of the probe station for better performance. The simulated S11 is less than -10 dB over 46-95 GHz, which is well matched with the measured results over the available 40-67 GHz frequency range from our measurement equipment. A maximum gain of-5.55 dBi with 4% radiation efficiency at a 60 GHz point is also achieved based on Ansofi HFSS simulation. Compared with the current state-of-the-art devices, the presented antenna achieves a wider bandwidth and could be used in wideband millimeter-wave communication and image applications.
