The two-dimensional（2D） perovskite（including pure-2D and quasi-2D） is formed by introducing large-group ammonium halides into conventional bulk perovskite. In the past twenty years, 2D perovskite materials were wi...The two-dimensional（2D） perovskite（including pure-2D and quasi-2D） is formed by introducing large-group ammonium halides into conventional bulk perovskite. In the past twenty years, 2D perovskite materials were widely developed with the enriched species and advanced physicalknowledge in material characteristics as well as optoelectronic device applications. To review achievments in 2D perovskite,the fundamental mechanism and properties of 2D perovskite are introduced to offer insight into device performance.Moreover, the preparation methods of 2D perovskite films are summarized and compared. The latest successful applications of the 2D perovskite in the solar cells and light-emitting diodes fields, especially the advanced stability of 2D perovskite solar cells（PeSCs） and the efficient 2D perovskite lightemitting diodes（PeLEDs）, are also achieved. Furthermore, the challenges and outlook of 2D perovskite materials are proposed.展开更多
Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating...Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.展开更多
基金supported by the National Key Research and Development Program of China (2016YFA0202401)the 111 Project (B16016)+1 种基金the National Natural Science Foundation of China (51572080, 51702096 and U1705256)the Fundamental Research Funds for the Central Universities (2017XS080)
文摘The two-dimensional（2D） perovskite（including pure-2D and quasi-2D） is formed by introducing large-group ammonium halides into conventional bulk perovskite. In the past twenty years, 2D perovskite materials were widely developed with the enriched species and advanced physicalknowledge in material characteristics as well as optoelectronic device applications. To review achievments in 2D perovskite,the fundamental mechanism and properties of 2D perovskite are introduced to offer insight into device performance.Moreover, the preparation methods of 2D perovskite films are summarized and compared. The latest successful applications of the 2D perovskite in the solar cells and light-emitting diodes fields, especially the advanced stability of 2D perovskite solar cells（PeSCs） and the efficient 2D perovskite lightemitting diodes（PeLEDs）, are also achieved. Furthermore, the challenges and outlook of 2D perovskite materials are proposed.
基金supported by the National Natural Science Foundation of China (51573042,61874148,51873007,5181101540 and 21835006)the Fundamental Research Funds for the Central Universities in China (2019MS025 and 2018MS032)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (LAPS20003)。
文摘Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.
