The activity of Co-SrTiO3 for photocatalytic decomposition of water into hydr ogen was studied, and the reason for improvement of activity of supported cataly sts by first reduction in H2 at a higher temperature and t...The activity of Co-SrTiO3 for photocatalytic decomposition of water into hydr ogen was studied, and the reason for improvement of activity of supported cataly sts by first reduction in H2 at a higher temperature and then reoxidation in oxy gen at a lower temperature was analyzed. The mechanism of the photocatalysis of Co-SrTiO3-R-O and Ni-SrTiO3-R-O catalyst was investigated. The metal, Ni o r Co deposited at the interface between the P-type semiconductor, NiO or CoO, a nd the N-type semiconductor, SiTiO3, which may act as the trapped site of elect ron and hole from the N-type semiconductor and the P-type semiconductor respec tively, suppresses the recombination of electron and hole in the bulk of semicon ductor, and furthermore increase the catalytic activity of the catalyst. A highe r activity of Co-SrTiO3-R-O for water decomposition than that of Ni-SrTiO3- R-O is mainly due to CoO having a narrower band gap and a wider range of light absorbance, compared with NiO.展开更多
文摘The activity of Co-SrTiO3 for photocatalytic decomposition of water into hydr ogen was studied, and the reason for improvement of activity of supported cataly sts by first reduction in H2 at a higher temperature and then reoxidation in oxy gen at a lower temperature was analyzed. The mechanism of the photocatalysis of Co-SrTiO3-R-O and Ni-SrTiO3-R-O catalyst was investigated. The metal, Ni o r Co deposited at the interface between the P-type semiconductor, NiO or CoO, a nd the N-type semiconductor, SiTiO3, which may act as the trapped site of elect ron and hole from the N-type semiconductor and the P-type semiconductor respec tively, suppresses the recombination of electron and hole in the bulk of semicon ductor, and furthermore increase the catalytic activity of the catalyst. A highe r activity of Co-SrTiO3-R-O for water decomposition than that of Ni-SrTiO3- R-O is mainly due to CoO having a narrower band gap and a wider range of light absorbance, compared with NiO.
