能源与环境问题已成为当今世界发展中遇到的一个十分重要的问题。本文将清洁发展机制(Clean Development Mechanism,简称CDM)与黑龙江省的各类资源特点相结合,从新能源和可再生能源,节能及能效提高,燃料替代以及甲烷回收利用等几个方面...能源与环境问题已成为当今世界发展中遇到的一个十分重要的问题。本文将清洁发展机制(Clean Development Mechanism,简称CDM)与黑龙江省的各类资源特点相结合,从新能源和可再生能源,节能及能效提高,燃料替代以及甲烷回收利用等几个方面分析了该省可开发CDM项目的潜力,并得到如下结论:黑龙江省在新能源和可再生能源领域拥有巨大潜力,节能及能效提高领域应得到重视,做好燃料替代领域的相关研究和积极做好甲烷的回收和利用。展开更多
We demonstrate that ultra-thin porous alumina membrane （PAM） is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at differ...We demonstrate that ultra-thin porous alumina membrane （PAM） is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy （MBE） method. Ordered Ge nanodot arrays with uniform size and high density are obtained at 400 and 500 ℃. Spatial frequency spectrums transformed from scanning electron microscopy images through fast Fourier transform are utilized to analyze surface morphologies of Ge nanodots. The long-range well-ordered Ge nanodot arrays form a duplication of PAM at 400 ~C while the hexagonal packed Ge nanodot arrays are comolementarv with PAM at 500℃.展开更多
文摘能源与环境问题已成为当今世界发展中遇到的一个十分重要的问题。本文将清洁发展机制(Clean Development Mechanism,简称CDM)与黑龙江省的各类资源特点相结合,从新能源和可再生能源,节能及能效提高,燃料替代以及甲烷回收利用等几个方面分析了该省可开发CDM项目的潜力,并得到如下结论:黑龙江省在新能源和可再生能源领域拥有巨大潜力,节能及能效提高领域应得到重视,做好燃料替代领域的相关研究和积极做好甲烷的回收和利用。
文摘We demonstrate that ultra-thin porous alumina membrane （PAM） is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy （MBE） method. Ordered Ge nanodot arrays with uniform size and high density are obtained at 400 and 500 ℃. Spatial frequency spectrums transformed from scanning electron microscopy images through fast Fourier transform are utilized to analyze surface morphologies of Ge nanodots. The long-range well-ordered Ge nanodot arrays form a duplication of PAM at 400 ~C while the hexagonal packed Ge nanodot arrays are comolementarv with PAM at 500℃.
