The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-chan...The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.展开更多
We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventi...We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventional Ni silicide method,the leakage current of a p+ (SiGe)-n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method.The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film.In addition,the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film.As a result,the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology.展开更多
文摘The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.
基金Supported by the National Basic Research Program of China under Grant Nos 2010CB934200 and 2012CB619200the National Key Project(2009ZX-02023)the Natural Science Foundation of Jiangsu Province(No BK2011011).
文摘We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process.It is found that with the conventional Ni silicide method,the leakage current of a p+ (SiGe)-n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method.The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film.In addition,the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film.As a result,the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology.
