We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed InGaAsP bulk material as the waveguide core layer. The threshold current is 17 mA and the output power is 8 mW on average. The thres...We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed InGaAsP bulk material as the waveguide core layer. The threshold current is 17 mA and the output power is 8 mW on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wave- length tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection.展开更多
This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density o...This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.展开更多
We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an...We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.展开更多
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit...A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.展开更多
基金supported by the National"863"Project of China under Grant No.2012AA012203
文摘We report a 1.8 μm two-section distributed Bragg reflector laser using butt-jointed InGaAsP bulk material as the waveguide core layer. The threshold current is 17 mA and the output power is 8 mW on average. The threshold current, output power, and emitting wavelength dependences on temperature are measured. The obtained wave- length tuning range is 10 nm. This device has potential applications in simultaneous multiple-gas detection.
基金Project supported by the National Science and Technology Major Project of Science and Technology of China(Grant No.2011ZX02708)the National Natural Science Foundation of China(Grant No.61504137)
文摘This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.
文摘We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.
基金Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708
文摘A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.
