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Effects of defect states on the performance of perovskite solar cells 被引量:2
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作者 司凤娟 汤富领 +1 位作者 薛红涛 荣斐 《Journal of Semiconductors》 EI CAS CSCD 2016年第7期24-30,共7页
We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell's performance. The verities of defect states with a different energy level in the band gap and those in ... We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell's performance. The verities of defect states with a different energy level in the band gap and those in the absorption layer CH3NH3PbI3 (MAPbI3), the interface between the buffer layer/MAPbI3, and the interface be- tween the hole transport material (HTM) and MAPbI3, were studied. We have quantitatively analyzed these effects on perovskite solar cells' performance parameters. They are open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency. We found that the performances of perovskite solar cells change worse with defect state density increasing, but when defect state density is lower than 1016 cm^-3, the effects are small. Defect states in the absorption layer have much larger effects than those in the adjacent interface layers. The per-ovskite solar cells have better performance as its working temperature is reduced. When the thickness of MAPbI3 is about 0.3μm, perovskite solar cells show better comprehensive performance, while the thickness 0.05μm for Spiro-OMeTAD is enough. 展开更多
关键词 device modeling defect states perovskite solar cells
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H,Cl和F原子钝化Cu2ZnSnS4(112)表面态的第一性原理计算
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作者 王小卡 汤富领 +3 位作者 薛红涛 司凤娟 荣斐 刘静波 《物理学报》 SCIE EI CAS CSCD 北大核心 2018年第16期271-282,共12页
采用基于密度泛函理论的第一性原理计算方法系统研究了Cu_2ZnSnS_4体相的晶格结构、能带、态密度及表面重构与H,Cl和F原子在Cu_2ZnSnS_4(112)表面上的吸附和钝化机理.计算结果表明:表面重构出现在以金属原子Cu-Zn-Sn终止的Cu_2ZnSnS_4(1... 采用基于密度泛函理论的第一性原理计算方法系统研究了Cu_2ZnSnS_4体相的晶格结构、能带、态密度及表面重构与H,Cl和F原子在Cu_2ZnSnS_4(112)表面上的吸附和钝化机理.计算结果表明:表面重构出现在以金属原子Cu-Zn-Sn终止的Cu_2ZnSnS_4(112)表面上,并且表面重构使表面发生自钝化;当单个H,Cl或F原子吸附在S原子终止的Cu_2ZnSnS_4(112)表面上时,相比于桥位(bridge)、六方密排(hcp)位和面心立方(fcc)位点,三种原子均在特定的顶位(top)吸附位点表现出最佳稳定性.当覆盖度为0.5 ML时,无论H,Cl还是F原子占据Cu_2ZnSnS_4(112)表面的2个顶位均具有最低的吸附能.以S原子终止的Cu_2ZnSnS_4(112)表面在费米能级附近的电子态主要由价带顶部Cu-3d轨道和S-3p轨道电子贡献,此即表面态.当H,Cl或F原子在表面的覆盖度达0.5 ML时,费米能级附近的表面态降低,其中H原子钝化表面态的效果最佳,Cl原子的效果次之,F原子的效果最差.表面态降低的主要原因在于吸附原子从S原子获得电子致使表面Cu原子和S原子在费米能级处的态密度峰几乎完全消失. 展开更多
关键词 第一性原理 Cu2ZnSnS4(112)表面态 吸附 钝化
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