sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0....sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.展开更多
We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopa...We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.展开更多
基金Supported by the National Natural Science Foundation of China(61674161,61504083)Open Project of State Key Laboratory of Functional Materials for Informatics,Public welfare capacity building in Guangdong Province(2015A010103016)the Science and Technology Foundation of Shenzhen(JCYJ20160226192033020)
基金Project supported by the National Natural Science Foundation of China(Nos.61306126,61306127,61106015)the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering
文摘sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.
基金Supported by the National Natural Science Foundation of China under Grant No 61674161the Open Project of State Key Laboratory of Functional Materials for Informatics
文摘We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors （SB- MOSFETs） fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height （SBH） for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
