Supported Pd catalyst is an important noble metal material in recent years due to its high catalytic performance in CO_(2)hydrogenation.A fluidized-bed plasma assisted atomic layer deposition(FP-ALD) process is report...Supported Pd catalyst is an important noble metal material in recent years due to its high catalytic performance in CO_(2)hydrogenation.A fluidized-bed plasma assisted atomic layer deposition(FP-ALD) process is reported to fabricate Pd nanoparticle catalyst over γ-Al_(2)O_(3)or Fe_(2)O_(3)/γ-Al_(2)O_(3)support,using palladium hexafluoroacetylacetonate as the Pd precursor and H_(2)plasma as counter-reactant.Scanning transmission electron microscopy exhibits that highdensity Pd nanoparticles are uniformly dispersed over Fe_(2)O_(3)/γ-Al_(2)O_(3)support with an average diameter of 4.4 nm.The deposited Pd-Fe_(2)O_(3)/γ-Al_(2)O_(3)shows excellent catalytic performance for CO_(2)hydrogenation in a dielectric barrier discharge reactor.Under a typical condition of H_(2)to CO_(2)ratio of 4 in the feed gas,the discharge power of 19.6 W,and gas hourly space velocity of10000 h^(-1),the conversion of CO_(2)is as high as 16.3% with CH_(3)OH and CH4selectivities of 26.5%and 3.9%,respectively.展开更多
Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the grow...Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate （PET, 12 μm） by plasma assisted atomic layer deposition （PA-ALD）, where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interracial species, -NH3, -OH, and -COOH as well as SiCHO （derived from monomer of HMDSO plasma）, were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry （SE） and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy （AFM）. In addition, the oxygen transmission rates （OTR） of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.展开更多
Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the ...Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited A1 films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.展开更多
This review describes the application of non-thermal plasma（NTP） technology for high barrier layer fabrication in packaging area.NTP technology is considered to be the most prospective approaches for the barrier lay...This review describes the application of non-thermal plasma（NTP） technology for high barrier layer fabrication in packaging area.NTP technology is considered to be the most prospective approaches for the barrier layer fabrication over the past decades due to unpollution,high speed,low-costing.The applications of NTP technology have achieved numerous exciting results in high barrier packaging area.Now it seemly demands a detailed review to summarize the past works and direct the future developments.This review focuses on the different NTP resources applied in the high barrier area,the role of plasma surface modification on packaging film surface properties,and the deposition of different barrier coatings based on NTP technology.In particular,this review emphasizes the cutting-edge technologies of NTP on interlayer deposition with organic,inorganic for multilayer barriers fabrication.The future prospects of NTP technology in high barrier film areas are also described.展开更多
基金financially supported by National Natural Science Foundation of China (Nos. 12075032 and 12105021)Beijing Municipal Natural Science Foundation (Nos.8222055 and 2232061)+1 种基金Yunnan Police College Project (No. YJKF002)Beijing Institute of Graphic Communication Project (No. Ec202207)。
文摘Supported Pd catalyst is an important noble metal material in recent years due to its high catalytic performance in CO_(2)hydrogenation.A fluidized-bed plasma assisted atomic layer deposition(FP-ALD) process is reported to fabricate Pd nanoparticle catalyst over γ-Al_(2)O_(3)or Fe_(2)O_(3)/γ-Al_(2)O_(3)support,using palladium hexafluoroacetylacetonate as the Pd precursor and H_(2)plasma as counter-reactant.Scanning transmission electron microscopy exhibits that highdensity Pd nanoparticles are uniformly dispersed over Fe_(2)O_(3)/γ-Al_(2)O_(3)support with an average diameter of 4.4 nm.The deposited Pd-Fe_(2)O_(3)/γ-Al_(2)O_(3)shows excellent catalytic performance for CO_(2)hydrogenation in a dielectric barrier discharge reactor.Under a typical condition of H_(2)to CO_(2)ratio of 4 in the feed gas,the discharge power of 19.6 W,and gas hourly space velocity of10000 h^(-1),the conversion of CO_(2)is as high as 16.3% with CH_(3)OH and CH4selectivities of 26.5%and 3.9%,respectively.
基金supported by National Natural Science Foundation of China (No.11175024)Beijing Natural Science Foundation (No.1112012),2011BAD24B01+1 种基金Scientific Research Common Program of Beijing Municipal Commission of Education(KM201110015008,KM201010015005)Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under theJurisdiction of Beijing Municipality (PHR20110516)
文摘Atomic layer deposition （ALD） technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate （PET, 12 μm） by plasma assisted atomic layer deposition （PA-ALD）, where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interracial species, -NH3, -OH, and -COOH as well as SiCHO （derived from monomer of HMDSO plasma）, were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry （SE） and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy （AFM）. In addition, the oxygen transmission rates （OTR） of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11175024)the Beijing Natural Science Foundation, China (Grant No. 1112012)+1 种基金the Science and Technology on Surface Engineering Laboratorythe Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516)
文摘Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited A1 films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.
基金financially supported by National Natural Science Foundation of China (Nos.11505013,11775028)Beijing Municipal Excellent Talent Training Foundation (No.2016000026833ZK12)+2 种基金Science and Technology Innovational Serviceability Building Project of Beijing Municipal Education Commission (No.PXM2017_014223_000066)Excellent Talent Selection and Training Project of BIGC of China (No.04190117004/026)Institute level project of BIGC of China (No.Eb201502)
文摘This review describes the application of non-thermal plasma（NTP） technology for high barrier layer fabrication in packaging area.NTP technology is considered to be the most prospective approaches for the barrier layer fabrication over the past decades due to unpollution,high speed,low-costing.The applications of NTP technology have achieved numerous exciting results in high barrier packaging area.Now it seemly demands a detailed review to summarize the past works and direct the future developments.This review focuses on the different NTP resources applied in the high barrier area,the role of plasma surface modification on packaging film surface properties,and the deposition of different barrier coatings based on NTP technology.In particular,this review emphasizes the cutting-edge technologies of NTP on interlayer deposition with organic,inorganic for multilayer barriers fabrication.The future prospects of NTP technology in high barrier film areas are also described.
