The emergent van der Waals magnetic material is a promising component for spintronic devices with novel functionalities.Here,we report a transition of negative-to-positive magnetoresistance in Fe_(3)GeTe_(2)/Cr_(2)Ge_...The emergent van der Waals magnetic material is a promising component for spintronic devices with novel functionalities.Here,we report a transition of negative-to-positive magnetoresistance in Fe_(3)GeTe_(2)/Cr_(2)Ge_(2)Te_(6)/Fe_(3)GeTe_(2)van der Waals all-magnetic tunnel junctions with increasing the applied bias voltage.A negative magnetoresistance is observed first in Fe_(3)GeTe_(2)/Cr_(2)Ge_(2)Te_(6)/Fe_(3)GeTe_(2)tunnel junctions,where the resistance with antiparallel aligned magnetization of two Fe_(3)GeTe_(2)electrodes is lower than that with parallel alignment,which is due to the opposite spin polarizations of two Fe_(3)GeTe_(2)electrodes.With the bias voltage increasing,the spin polarization of the biased Fe_(3)GeTe_(2)electrode is changed so that the spin orientations of two Fe_(3)GeTe_(2)electrodes are the same.Our experimental observations are supported by the calculated spin-dependent density of states for Fe_(3)GeTe_(2)electrodes under a finite bias.The significantly bias voltage-dependent spin transport properties in van der Waals magnetic tunnel junctions open a promising route for designing electrical controllable spintronic devices based on van der Waals magnets.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1405100)the Beijing Natural Science Foundation Key Program(Grant No.Z190007)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB44000000 and XDB28000000)the National Natural Science Foundation of China(Grant Nos.12241405,11734004,and 12174028)。
文摘The emergent van der Waals magnetic material is a promising component for spintronic devices with novel functionalities.Here,we report a transition of negative-to-positive magnetoresistance in Fe_(3)GeTe_(2)/Cr_(2)Ge_(2)Te_(6)/Fe_(3)GeTe_(2)van der Waals all-magnetic tunnel junctions with increasing the applied bias voltage.A negative magnetoresistance is observed first in Fe_(3)GeTe_(2)/Cr_(2)Ge_(2)Te_(6)/Fe_(3)GeTe_(2)tunnel junctions,where the resistance with antiparallel aligned magnetization of two Fe_(3)GeTe_(2)electrodes is lower than that with parallel alignment,which is due to the opposite spin polarizations of two Fe_(3)GeTe_(2)electrodes.With the bias voltage increasing,the spin polarization of the biased Fe_(3)GeTe_(2)electrode is changed so that the spin orientations of two Fe_(3)GeTe_(2)electrodes are the same.Our experimental observations are supported by the calculated spin-dependent density of states for Fe_(3)GeTe_(2)electrodes under a finite bias.The significantly bias voltage-dependent spin transport properties in van der Waals magnetic tunnel junctions open a promising route for designing electrical controllable spintronic devices based on van der Waals magnets.
