Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structu...Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.展开更多
The photoluminescence（PL） properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots（QDs） and an InGaN matrix in the InGaN epilaye...The photoluminescence（PL） properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots（QDs） and an InGaN matrix in the InGaN epilayer are investigated.The excitation power dependences of QD-related green emissions（PD〉） and matrix-related blue emissions（PM） in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both Pm and PD are dominated by the combined action of Coulomb screening and localized state filling effect.However,at 300 K,Pm is dominated by the non-radiative recombination of the carriers in the InGaN matrix,while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunnelling.This is consistent with the excitation power dependence of the PL efficiency for the emission.展开更多
基金Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120131110006)the Key Science and Technology Program of Shandong Province+10 种基金China(Grant No.2013GGX10221)the Key Laboratory of Functional Crystal Materials and Device(Shandong UniversityMinistry of Education)China(Grant No.JG1401)the National Natural Science Foundation of China(Grant No.61306113)the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112)the Partnership Project for Fundamental Technology Researches of the Ministry of EducationCultureSportsScience and TechnologyJapan
文摘Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.
基金supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120131110006)the Key Science and Technology Program of Shandong Province,China(Grant No.2013GGX10221)+2 种基金the Key Laboratory of Functional Crystal Materials and Device(Shandong University,Ministry of Education)(Grant No.JG1401)the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112)the National Natural Science Foundation of China(Grant No.61306113)
文摘The photoluminescence（PL） properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots（QDs） and an InGaN matrix in the InGaN epilayer are investigated.The excitation power dependences of QD-related green emissions（PD〉） and matrix-related blue emissions（PM） in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both Pm and PD are dominated by the combined action of Coulomb screening and localized state filling effect.However,at 300 K,Pm is dominated by the non-radiative recombination of the carriers in the InGaN matrix,while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunnelling.This is consistent with the excitation power dependence of the PL efficiency for the emission.
