Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit...Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of-55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61106115)
文摘Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of-55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.
