Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field （BEF） in the wurtzite InGaN strained coupled quantum dots （QDs）, the positively charged donor bound e...Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field （BEF） in the wurtzite InGaN strained coupled quantum dots （QDs）, the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.展开更多
Considering the strong built-in electric field （BEF） effects due to the spontaneous and piezoelectric polarizations, the intersubband optical absorptions and refractive index changes for an InxGa1-xN/AlyGa1-yN strai...Considering the strong built-in electric field （BEF） effects due to the spontaneous and piezoelectric polarizations, the intersubband optical absorptions and refractive index changes for an InxGa1-xN/AlyGa1-yN strained single quantum well are studied theoretically within the framework of the density matrix method and effective-mass approximation. The linear, third-order nonlinear and total absorption coefficients and refractive index changes are calculated as a function of the incident optical intensity and photon energy. Our results show that both the incident optical intensity and the strong BEF have great influence on the total absorptions and refractive index cllanges. The results are significant for designing some important photodetectors and the photonic crystal devices with adjustable photonic band structures.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60276004 and 60390073.
文摘Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field （BEF） in the wurtzite InGaN strained coupled quantum dots （QDs）, the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.
文摘Considering the strong built-in electric field （BEF） effects due to the spontaneous and piezoelectric polarizations, the intersubband optical absorptions and refractive index changes for an InxGa1-xN/AlyGa1-yN strained single quantum well are studied theoretically within the framework of the density matrix method and effective-mass approximation. The linear, third-order nonlinear and total absorption coefficients and refractive index changes are calculated as a function of the incident optical intensity and photon energy. Our results show that both the incident optical intensity and the strong BEF have great influence on the total absorptions and refractive index cllanges. The results are significant for designing some important photodetectors and the photonic crystal devices with adjustable photonic band structures.
