Due to the unique anisotropic chemical and physical properties,two-dimensional(2D)layered materials such as IV-VI monochalcogenides with puckered honeycomb structure,have received considerable interest recently.Among ...Due to the unique anisotropic chemical and physical properties,two-dimensional(2D)layered materials such as IV-VI monochalcogenides with puckered honeycomb structure,have received considerable interest recently.Among the IV-VI layered MX(M=Ge,Sn;X=Se,S)compounds,germanium sulfide(Ge S)stands out for its strongest anisotropic thermal conductivities and figure-of-merit values.Additionally,the layer-independent direct energy bands(Eg^1.6 e V,E1~2.1 e V)of Ge S flake provide excellent insights into further applications as visible photodetectors.Herein,the polarization-tunable nonlinear absorption(NA)patterns of Ge S flake have been systematically investigated.Specifically both the polarization-dependent Raman spectroscopy and the linear absorption(LA)spectroscopy were employed to characterize the lattice orientation and absorption edges of the251-nm Ge S flake.Considering the low damage threshold of Ge S flake,the Ge S/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of Ge S.Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption(SA)effect along armchair and reversesaturated-absorption(RSA)effect along zigzag in the Ge S/graphene heterostructure.Moreover,the function of the polarization-based Ge S/graphene heterostructure all-optical switch was experimentally verified.Notably,thanks to the polarization-dependent NA patterns(SA/RSA)of Ge S,the"ON"and"OFF"states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser(532 nm,80 n W),whose state can be controlled by the polarization of femtosecond switching laser(600 nm,35 fs,500 Hz,12 GW cm-2).The ON/OFF ratio can achieve up to 17%by changing polarization,compared with the ratios of 3.0%by increasing the incident power of switching light in our experiment.The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devi展开更多
基金financial support from the National Natural Science Foundation of China(11802339,11805276,61805282,61801498,11804387,and 11902358)the Scientific Researches Foundation of National University of Defense Technology(ZK16-03-59,ZK18-01-03,ZK18-03-36,and ZK18-03-22)+4 种基金the Natural Science Foundation of Hunan province(2016JJ1021)the Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology(SKL2018ZR05)the Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology(GNJGJS03)the Opening Foundation of State Key Laboratory of Laser Interaction with Matter(SKLLIM1702)the Youth Talent Lifting Project(17-JCJQ-QT004)。
文摘Due to the unique anisotropic chemical and physical properties,two-dimensional(2D)layered materials such as IV-VI monochalcogenides with puckered honeycomb structure,have received considerable interest recently.Among the IV-VI layered MX(M=Ge,Sn;X=Se,S)compounds,germanium sulfide(Ge S)stands out for its strongest anisotropic thermal conductivities and figure-of-merit values.Additionally,the layer-independent direct energy bands(Eg^1.6 e V,E1~2.1 e V)of Ge S flake provide excellent insights into further applications as visible photodetectors.Herein,the polarization-tunable nonlinear absorption(NA)patterns of Ge S flake have been systematically investigated.Specifically both the polarization-dependent Raman spectroscopy and the linear absorption(LA)spectroscopy were employed to characterize the lattice orientation and absorption edges of the251-nm Ge S flake.Considering the low damage threshold of Ge S flake,the Ge S/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of Ge S.Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption(SA)effect along armchair and reversesaturated-absorption(RSA)effect along zigzag in the Ge S/graphene heterostructure.Moreover,the function of the polarization-based Ge S/graphene heterostructure all-optical switch was experimentally verified.Notably,thanks to the polarization-dependent NA patterns(SA/RSA)of Ge S,the"ON"and"OFF"states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser(532 nm,80 n W),whose state can be controlled by the polarization of femtosecond switching laser(600 nm,35 fs,500 Hz,12 GW cm-2).The ON/OFF ratio can achieve up to 17%by changing polarization,compared with the ratios of 3.0%by increasing the incident power of switching light in our experiment.The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devi
