Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel–Kirchhoff diffraction integral in experiments with high nonlinear refracti...Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel–Kirchhoff diffraction integral in experiments with high nonlinear refraction and absorption. The constancy of nonlinear optical parameters is achieved regardless of sample thickness and laser intensity, which clarifies the physical significance of optical parameters. We have obtained γ = 2.0 × 10-19 m2/W and β = 5.0 × 10-13 m/W for carbon disulfide excited by a pulsed laser at 800 nm with pulse duration of 35 fs,which are independent of sample thickness and laser intensity. Affirming constancy of the extracted parameters to the incident light intensity may become a practice to verify the goodness of the z-scan experiment.展开更多
Quantum well intermixing （QWI） by the impurity-free vacancy disordering （IFVD） technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum ...Quantum well intermixing （QWI） by the impurity-free vacancy disordering （IFVD） technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped （P, N and I） top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.展开更多
基金an open-project fund support from the State Key laboratory of Opto-Electronic Material and Technologies (Sun Yat-sen University),Guangzhou,Chinasupported by NTU Excellent Research Project (10R80908 and 102R890954)
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.91950207,61675171 and 61675169)the Shaanxi Provincial Key R&D Program(No.2018KW-009)the Fundamental Research Funds for the Central Universities(Nos.3102017HQZZ022 and 3102017zy021)
文摘Goodness of fit is demonstrated for theoretical calculation of z-scan data based on beams propagating in the nonlinear medium and the Fresnel–Kirchhoff diffraction integral in experiments with high nonlinear refraction and absorption. The constancy of nonlinear optical parameters is achieved regardless of sample thickness and laser intensity, which clarifies the physical significance of optical parameters. We have obtained γ = 2.0 × 10-19 m2/W and β = 5.0 × 10-13 m/W for carbon disulfide excited by a pulsed laser at 800 nm with pulse duration of 35 fs,which are independent of sample thickness and laser intensity. Affirming constancy of the extracted parameters to the incident light intensity may become a practice to verify the goodness of the z-scan experiment.
文摘Quantum well intermixing （QWI） by the impurity-free vacancy disordering （IFVD） technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped （P, N and I） top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.
