In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-an...In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.展开更多
Monolithic perovskite/Si tandem solar cells(TSCs)have experienced rapid development in recent years,demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells.Unlike typical or...Monolithic perovskite/Si tandem solar cells(TSCs)have experienced rapid development in recent years,demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells.Unlike typical organic-inorganic hybrid perovskite/silicon heterojunction TSCs,here we propose CsPbI_(3)/TOPCon TSC,which is a promising architecture in consideration of its pleasurable thermal stability and good compatibility with current PERC production lines.The optical performance of CsPbI_(3)/TOPCon TSCs is simulated by the combination of ray-tracing method and transfer matrix method.The light management of the CsPbI_(3)/TOPCon TSC begins with the optimization of the surface texture on Si subcell,indicating that a bifacial inverted pyramid with a small bottom angle of rear-side enables a further minimization of the optical losses.Current matching between the subcells,as well as the parasitic absorption loss from the front transparent conductive oxide,is analyzed and discussed in detail.Finally,an optimized configuration of CsPbI_(3)/TOPCon TSC with a31.78%power conversion efficiency is proposed.This work provides a practical guidance for approaching high-efficiency perovskite/Si TSCs.展开更多
Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications（RFID...Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications（RFIDs）,etc.Zinc oxide（ZnO） and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors（TFTs） based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component（substrate,electrodes,channel and dielectrics） is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.展开更多
Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer con...Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition.The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT.A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities.It is found that the low-R layer improves the mobility,ON/OFF ratio,threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface.The high-R IGZO layer has a great impact on the hysteresis,which changes from clockwise to counterclockwise.The best TFT shows a mobility of 5.41 cm^2/V·s,a subthreshold swing of 95.0 mV/dec,an ON/OFF ratio of 6.70×10^7,a threshold voltage of 0.24 V,and a hysteresis voltage of 0.13 V.The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.展开更多
Direct ZnO x-ray detectors with tunable sensitivity are realized by delicately controlling the oxygen flux during the sputtering deposition process. The photocurrents induced by x-rays from a 40 kV x-ray tube with a C...Direct ZnO x-ray detectors with tunable sensitivity are realized by delicately controlling the oxygen flux during the sputtering deposition process. The photocurrents induced by x-rays from a 40 kV x-ray tube with a Cu anode increase apparently as the oxygen flux decreases, which is attributed to the introduction of Vo detects.By introducing Vo defects, the annihilation rate of the photo-generated electron-hole pairs will be greatly slowed down, leading to a remarkable photoconductive gain. This finding informs a novel way to design the x-ray detectors based on abundant oxide materials.展开更多
Inorganic Cs_(2)SnI_(6) perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelectronic properties and remarkable stability in ambient conditions.The charge transport characte...Inorganic Cs_(2)SnI_(6) perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelectronic properties and remarkable stability in ambient conditions.The charge transport characteristics within perovskite films are subject to modulation by various factors,including crystalline orientation,morphology,and crystalline quality.Achieving preferred crystalline orientation and film morphology via a solution-based process is challenging for Cs_(2)SnI_(6) films.In this work,we employed thiourea as an additive to optimize crystal orientation,enhance film morphology,promote crystallization,and achieve phase purity.Thiourea lowers the surface energy of the(222)plane along the(111)direction,confirmed by x-ray diffraction,x-ray photoelectron spectroscopy,ultraviolet photoelectron spectroscopy studies,and density functional theory calculations.Varying thiourea concentration enables a bandgap tuning of Cs_(2)SnI_(6) from 1.52 eV to1.07 eV.This approach provides a novel method for utilizing Cs_(2)SnI_(6) films in high-performance optoelectronic devices.展开更多
In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.11674405 and 11675280)the Fund from the Laboratory of Microfabrication in Institute of Physics,Chinese Academy of Sciences
文摘In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61904201 and 11875088)the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2019B1515120057)。
文摘Monolithic perovskite/Si tandem solar cells(TSCs)have experienced rapid development in recent years,demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells.Unlike typical organic-inorganic hybrid perovskite/silicon heterojunction TSCs,here we propose CsPbI_(3)/TOPCon TSC,which is a promising architecture in consideration of its pleasurable thermal stability and good compatibility with current PERC production lines.The optical performance of CsPbI_(3)/TOPCon TSCs is simulated by the combination of ray-tracing method and transfer matrix method.The light management of the CsPbI_(3)/TOPCon TSC begins with the optimization of the surface texture on Si subcell,indicating that a bifacial inverted pyramid with a small bottom angle of rear-side enables a further minimization of the optical losses.Current matching between the subcells,as well as the parasitic absorption loss from the front transparent conductive oxide,is analyzed and discussed in detail.Finally,an optimized configuration of CsPbI_(3)/TOPCon TSC with a31.78%power conversion efficiency is proposed.This work provides a practical guidance for approaching high-efficiency perovskite/Si TSCs.
基金Project supported by the National Natural Science Foundation of China(Grants Nos.61306011,11274366,51272280,11674405,and 11675280)
文摘Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications（RFIDs）,etc.Zinc oxide（ZnO） and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors（TFTs） based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component（substrate,electrodes,channel and dielectrics） is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674405,61874139,and 11675280)
文摘Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition.The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT.A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities.It is found that the low-R layer improves the mobility,ON/OFF ratio,threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface.The high-R IGZO layer has a great impact on the hysteresis,which changes from clockwise to counterclockwise.The best TFT shows a mobility of 5.41 cm^2/V·s,a subthreshold swing of 95.0 mV/dec,an ON/OFF ratio of 6.70×10^7,a threshold voltage of 0.24 V,and a hysteresis voltage of 0.13 V.The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675280,11674405,61874139 and 11875088
文摘Direct ZnO x-ray detectors with tunable sensitivity are realized by delicately controlling the oxygen flux during the sputtering deposition process. The photocurrents induced by x-rays from a 40 kV x-ray tube with a Cu anode increase apparently as the oxygen flux decreases, which is attributed to the introduction of Vo detects.By introducing Vo defects, the annihilation rate of the photo-generated electron-hole pairs will be greatly slowed down, leading to a remarkable photoconductive gain. This finding informs a novel way to design the x-ray detectors based on abundant oxide materials.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.12174275,62174113,61874139,61904201,and 11875088)Guangdong Basic and Applied Basic Research Foundation (Grant No.2019B1515120057)。
文摘Inorganic Cs_(2)SnI_(6) perovskite has exhibited substantial potential for light harvesting due to its exceptional optoelectronic properties and remarkable stability in ambient conditions.The charge transport characteristics within perovskite films are subject to modulation by various factors,including crystalline orientation,morphology,and crystalline quality.Achieving preferred crystalline orientation and film morphology via a solution-based process is challenging for Cs_(2)SnI_(6) films.In this work,we employed thiourea as an additive to optimize crystal orientation,enhance film morphology,promote crystallization,and achieve phase purity.Thiourea lowers the surface energy of the(222)plane along the(111)direction,confirmed by x-ray diffraction,x-ray photoelectron spectroscopy,ultraviolet photoelectron spectroscopy studies,and density functional theory calculations.Varying thiourea concentration enables a bandgap tuning of Cs_(2)SnI_(6) from 1.52 eV to1.07 eV.This approach provides a novel method for utilizing Cs_(2)SnI_(6) films in high-performance optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。
文摘In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
