Antiferromagnetic (AFM) materials have attracted wide attention in spin-orbit torque (SOT)-based spintronic due to its abundant spin-dependent properties and unique advantage of immunity against external field perturb...Antiferromagnetic (AFM) materials have attracted wide attention in spin-orbit torque (SOT)-based spintronic due to its abundant spin-dependent properties and unique advantage of immunity against external field perturbations.To act as the charge-to-spin conversion source in energy-saving spintronic devices,it is of great importance for the AFM material to possess a large spin torque efficiency(ξDL).In this work,using the spin torque ferromagnetic resonance (ST-FMR) technique and a Mn2Au/Ni Fe(Py) bilayer system,we systemically study the ξDLof AFM Mn2Au films with different crystal structures.Compared with polycrystalline Mn2Au with effective ξDL<0.051,we show a much larger ξDLof~0.333 in single-crystal Mn2Au,which arises from the large spin Hall conductivity instead of electrical resistivity.Moreover,with a further contribution of interfacial effects,the effective ξDLof single-crystalline Mn2Au/Py system increases to 0.731,which is more than two times larger than the value of ~0.22 reported for the Mn2Au/CoFeB system.By utilizing the largeξDLof Mn2Au in a perpendicularly magnetized Mn Ga/Mn2Au system,energy-efficient deterministic magnetization switching with a current density at ~10^(6)A cm^(-2)is achieved.Our results reveal a significant potential of Mn2Au as an efficient SOT source and shed light on its application in future AFM material-based SOT integration technology.展开更多
基金supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the National Natural Science Foundation of China(62004056,61874158,and 62104058)+12 种基金the Cultivation Projects of National Major R&D Project(92164109)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University(DXK202101)the Institute of Life Sciences and Green Development(521100311)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the Advanced Talents Incubation Program of the Hebei University(521000981426,521100221071,and 521000981363)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)Baoding Science and Technology Plan Project(2172P011)。
基金supported by the Agency for Science,Technology and Research (A*STAR) of Singapore (A1983c0036)the Singapore Ministry of Education (MOE2018-T2-2043)A*STAR IAF-ICP 11801E0036。
文摘Antiferromagnetic (AFM) materials have attracted wide attention in spin-orbit torque (SOT)-based spintronic due to its abundant spin-dependent properties and unique advantage of immunity against external field perturbations.To act as the charge-to-spin conversion source in energy-saving spintronic devices,it is of great importance for the AFM material to possess a large spin torque efficiency(ξDL).In this work,using the spin torque ferromagnetic resonance (ST-FMR) technique and a Mn2Au/Ni Fe(Py) bilayer system,we systemically study the ξDLof AFM Mn2Au films with different crystal structures.Compared with polycrystalline Mn2Au with effective ξDL<0.051,we show a much larger ξDLof~0.333 in single-crystal Mn2Au,which arises from the large spin Hall conductivity instead of electrical resistivity.Moreover,with a further contribution of interfacial effects,the effective ξDLof single-crystalline Mn2Au/Py system increases to 0.731,which is more than two times larger than the value of ~0.22 reported for the Mn2Au/CoFeB system.By utilizing the largeξDLof Mn2Au in a perpendicularly magnetized Mn Ga/Mn2Au system,energy-efficient deterministic magnetization switching with a current density at ~10^(6)A cm^(-2)is achieved.Our results reveal a significant potential of Mn2Au as an efficient SOT source and shed light on its application in future AFM material-based SOT integration technology.
