Combining the charged particle activation analysis (CPAA) and the (?)hanneling technique, partial concentrations of carbon on different crystal lattice locations of GaAs were calculated. The results show that at lower...Combining the charged particle activation analysis (CPAA) and the (?)hanneling technique, partial concentrations of carbon on different crystal lattice locations of GaAs were calculated. The results show that at lower total concentration (≈0.3 ppm), carbon atoms occupy principally the octahedral and displaced octahedral interstitial positions, but at higher total concentration (≈2 ppm), the substitutional carbon plays a principal role.展开更多
In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other...In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.展开更多
研究了五种无限供应的 Bilayer 膜金属/硅体系中(Ni/Si,Cu/Si,Nb/Si,Mo/Si,Ti/Si),因离子束注入引起的界面原子交混及相变过程。界面温度和注入离子剂量显著影响薄膜相变,在生成各种金属 Si 化物及固溶体时,反应温度和生长激活能大大降...研究了五种无限供应的 Bilayer 膜金属/硅体系中(Ni/Si,Cu/Si,Nb/Si,Mo/Si,Ti/Si),因离子束注入引起的界面原子交混及相变过程。界面温度和注入离子剂量显著影响薄膜相变,在生成各种金属 Si 化物及固溶体时,反应温度和生长激活能大大降低,相变动力学过程与热退火反应不尽相同,诱导离子和基体取向对成相生长也有影响。讨论了相应微观机理。展开更多
基金The Project Supported partly by Natural Science Foundation of China and Electronic Science Academy
文摘Combining the charged particle activation analysis (CPAA) and the (?)hanneling technique, partial concentrations of carbon on different crystal lattice locations of GaAs were calculated. The results show that at lower total concentration (≈0.3 ppm), carbon atoms occupy principally the octahedral and displaced octahedral interstitial positions, but at higher total concentration (≈2 ppm), the substitutional carbon plays a principal role.
文摘In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
文摘研究了五种无限供应的 Bilayer 膜金属/硅体系中(Ni/Si,Cu/Si,Nb/Si,Mo/Si,Ti/Si),因离子束注入引起的界面原子交混及相变过程。界面温度和注入离子剂量显著影响薄膜相变,在生成各种金属 Si 化物及固溶体时,反应温度和生长激活能大大降低,相变动力学过程与热退火反应不尽相同,诱导离子和基体取向对成相生长也有影响。讨论了相应微观机理。
