对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) ...对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。展开更多
Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and th...Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0. 1μm at 80K. A variety of surface defects are observed and the formation mechanism is discussed. The average density of surface defects in 75mm HgCdTe epiluyers is found to be less than 300cm^-2. It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature, being only -1 × 10^-4 at 170℃. The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as （Na - Nd）^1/3 with a slope of 3.1 × 10^-5 meV · cm. The diffusion coefficients of As in HgCdTe of 1.0 ± 0,9 × 10^-16,8 ± 3 × 10^- is, and 1.5 ± 0.9 × 10^-13 cm^2/s are obtained at temperatures of 240,380, and 440℃, respectively under Hg-saturated pressure. The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.展开更多
文摘对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。
文摘Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described. Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0. 1μm at 80K. A variety of surface defects are observed and the formation mechanism is discussed. The average density of surface defects in 75mm HgCdTe epiluyers is found to be less than 300cm^-2. It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature, being only -1 × 10^-4 at 170℃. The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as （Na - Nd）^1/3 with a slope of 3.1 × 10^-5 meV · cm. The diffusion coefficients of As in HgCdTe of 1.0 ± 0,9 × 10^-16,8 ± 3 × 10^- is, and 1.5 ± 0.9 × 10^-13 cm^2/s are obtained at temperatures of 240,380, and 440℃, respectively under Hg-saturated pressure. The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.
