The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） d...The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.展开更多
基金Project supported by the Key Projects of the National Natural Science Foundation of China(Grant No.11032010)the National Natural Science Foundation of China(Grant Nos.51072171,61274107,61176093,and 11275163)+4 种基金the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1080)the National Basic Rearch Program of China(Grant No.2012CB326404)the Key Projects of Scientific Research Fund of Hunan Provincial Education Department,China(Grant No.12A129)the Doctoral Program of Higher Education of China(Grant No.20104301110001)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3 thin films. These two switching modes can be activated separately depending on the compliance current （Icomp） during the electroforming process： with a higher Icomp （5 mA） the unipolar resistance switching behavior is measured, while the bipolar resistance switching behavior is observed with a lower Icomp （1 mA）. On the basis of I–V characteristics, the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3 interface and the formation and disruption of conduction filaments, respectively.
