The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug effi...The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.展开更多
本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,...本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,我们实现了对所获得的MoS_(2)的形貌和取向的调控;同时,通过改变生长时间,可以实现对MoS_(2)层数的调控.利用这种方法,我们获得了最窄宽度仅为200 nm,纵横比超过100的单层MoS_(2)纳米-微米带,且表征证明其具有很高的晶体质量.同时,我们还用该MoS_(2)纳米带作为沟道材料,制备了光电晶体管,测试表明其具有高达9×10^(5)的电流开/关比、超过10^(5)的光暗电流比以及高达8.6 A W^(-1)的响应度,展现了其在电子和光电子器件中的应用潜力.展开更多
利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂 ZnO单晶薄膜.用 Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率,并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析.研究表明:ZnO薄膜浅施主能级为20 4meV...利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂 ZnO单晶薄膜.用 Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率,并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析.研究表明:ZnO薄膜浅施主能级为20 4meV,温度较低时,以电离杂质散射为主,温度较高时,以极性光学波散射为主.展开更多
基金supported by the National Natural Science Foundation of China(No.61905236)the University of Science and Technology of China(No.KY2100000081)+2 种基金the Chinese Academy of Sciences(No.KJ2100230003)the Fundamental Research Funds for the Central Universities(No.WK2100230020)the USTC Research Funds of the Double First-Class Initiative(No.YD3480002002)。
文摘The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.
基金supported by the National Natural Science Foundation of China(62174063,62174061,and 61974174)the National Key Research and Development Program of China(2022YFB3605104)+3 种基金the Key Research and Development Program of Hubei Province(2021BAA071)the Natural Science Foundation of Hubei Province(2022CFB011)the Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences(IIMDKFJJ-21-07)the Fundamental Research Funds for the Central Universities(2020kfyXJJS124)。
文摘本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,我们实现了对所获得的MoS_(2)的形貌和取向的调控;同时,通过改变生长时间,可以实现对MoS_(2)层数的调控.利用这种方法,我们获得了最窄宽度仅为200 nm,纵横比超过100的单层MoS_(2)纳米-微米带,且表征证明其具有很高的晶体质量.同时,我们还用该MoS_(2)纳米带作为沟道材料,制备了光电晶体管,测试表明其具有高达9×10^(5)的电流开/关比、超过10^(5)的光暗电流比以及高达8.6 A W^(-1)的响应度,展现了其在电子和光电子器件中的应用潜力.
文摘利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂 ZnO单晶薄膜.用 Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率,并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析.研究表明:ZnO薄膜浅施主能级为20 4meV,温度较低时,以电离杂质散射为主,温度较高时,以极性光学波散射为主.
