The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent ...The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.展开更多
基金supported by the National Key R&D Program of China(Nos.2019YFA0705000 and 2018YFB2201700)。
文摘The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.
