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In-plane spin excitation of skyrmion bags
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作者 李爽 李可欣 +9 位作者 刘照华 朱起源 赵晨博 张虎 石兴强 王江龙 王瑞宁 连如乾 金晨东 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第11期585-590,共6页
Skyrmion bags are spin structures with arbitrary topological charges, each of which is composed of a big skyrmion and several small skyrmions. In this work, by using an in-plane alternating current(AC) magnetic field,... Skyrmion bags are spin structures with arbitrary topological charges, each of which is composed of a big skyrmion and several small skyrmions. In this work, by using an in-plane alternating current(AC) magnetic field, we investigate the spinwave modes of skyrmion bags, which behave differently from the clockwise(CW) rotation mode and the counterclockwise(CCW) rotation mode of skyrmions because of their complex spin topological structures. The in-plane excitation power spectral density shows that each skyrmion bag possesses four resonance frequencies. By further studying the spin dynamics of a skyrmion bag at each resonance frequency, the four spin-wave modes, i.e., a CCW-CW mode, two CW-breathing modes with different resonance strengths, and an inner CCW mode, appear as a composition mode of outer skyrmion–inner skyrmions. Our results are helpful in understanding the in-plane spin excitation of skyrmion bags, which may contribute to the characterization and detection of skyrmion bags, as well as the applications in logic devices. 展开更多
关键词 skyrmion bags spin-wave mode power spectral density micromagnetic simulation
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Approaching strain limit of two-dimensional MoS_(2) via chalcogenide substitution 被引量:1
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作者 Kailang Liu Xiang Chen +11 位作者 Penglai Gong Ruohan Yu Jinsong Wu Liang Li Wei Han Sanjun Yang Chendong Zhang Jinghao Deng Aoju Li Qingfu Zhang Fuwei Zhuge Tianyou Zhai 《Science Bulletin》 SCIE EI CSCD 2022年第1期45-53,M0004,共10页
Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large a... Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices. 展开更多
关键词 Strain engineering 2D materials Chalcogenide substitution Controllable strain Lattice inheritance
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