Finite elements methods are used to investigate the thermal-electrical characteristics of gallium-nitride （GaN） light-emitting diodes （LEDs） with different transparent conductive layers （TCLs） and buried depths ...Finite elements methods are used to investigate the thermal-electrical characteristics of gallium-nitride （GaN） light-emitting diodes （LEDs） with different transparent conductive layers （TCLs） and buried depths of electrodes, where the transparent conductive layers include indium tin oxide （ITO）, graphene （Gr） and the combination of them （ITO/Gr）. The optimal material parameters and the precision and accuracy of the simulation model are validated. Moreover, the parameters＇ sensitivity analysis is carried out as well. The results indicate that the LED with the TCL of a lO0-nm ITO or 4-1ayer Gr has a good thermal-electrical performance from the viewpoint of the maximum temperature and the current density deviation of multiple quantum well （MQW）, where the maximum temperature occurs at the n-Pad rather than p-Pad. The compound TCL with a 20-nm ITO and 3- layer Gr reaches a thermal-electrical performance better than that of a lO0-nm ITO or 4-layer Gr. Moreover, their maximum temperatures decrease about -0.43% and 1.21%, and the current density uniformities increase up to -6.09% and 17.41%, respectively. Furthermore, when the electrode buried depth is 0.51 μm, the thermal-electrical performance of the GaN LEDs can be further improved.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11304405 and 11074314, the Scientific and Technological D＆R Projects of Chongqing under Grant Nos CSTC2012gg-gjhz50001 and CSTC2013jjB0023, the Chongqing Education Commission under Grant No KJ132209, the Fundamental Research Funds for the Central Universities under Grant No DJZR12138801, and the Sharing Fund of Large-scale Equipment of Chongqing University under Grant Nos 2012121556, 2012121559, 2012121560. 2013121560 and 2013121561.
文摘Finite elements methods are used to investigate the thermal-electrical characteristics of gallium-nitride （GaN） light-emitting diodes （LEDs） with different transparent conductive layers （TCLs） and buried depths of electrodes, where the transparent conductive layers include indium tin oxide （ITO）, graphene （Gr） and the combination of them （ITO/Gr）. The optimal material parameters and the precision and accuracy of the simulation model are validated. Moreover, the parameters＇ sensitivity analysis is carried out as well. The results indicate that the LED with the TCL of a lO0-nm ITO or 4-1ayer Gr has a good thermal-electrical performance from the viewpoint of the maximum temperature and the current density deviation of multiple quantum well （MQW）, where the maximum temperature occurs at the n-Pad rather than p-Pad. The compound TCL with a 20-nm ITO and 3- layer Gr reaches a thermal-electrical performance better than that of a lO0-nm ITO or 4-layer Gr. Moreover, their maximum temperatures decrease about -0.43% and 1.21%, and the current density uniformities increase up to -6.09% and 17.41%, respectively. Furthermore, when the electrode buried depth is 0.51 μm, the thermal-electrical performance of the GaN LEDs can be further improved.
