We report on a white hybrid light-emitting device employing a mixture of ternary CdSe/ZnS quantum dots(QDs)as an emitting layer(EML)and a small molecular material tris(8-hydroxyquinoline)aluminum(Alq3)as an electron-t...We report on a white hybrid light-emitting device employing a mixture of ternary CdSe/ZnS quantum dots(QDs)as an emitting layer(EML)and a small molecular material tris(8-hydroxyquinoline)aluminum(Alq3)as an electron-transporting layer.The film morphology of the spin-coated mixture of QDs is strongly improved via thermal annealing,and therefore a close-packed QD-EML is realized between organic charge-transporting layers.As a result,compared to the device with an unannealed QD-EML,the emission of Alq3 is deeply suppressed.In addition,a maximum luminance of more than 1000 cd/m2 and a maximum luminous efficiency of 2.2 cd/A are achieved.展开更多
We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optim...We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optimum ris-（8-hydroxyquinoline）aluminum （Alq3）-based organic light-emitting diode with a c-HTL exhibits a lower turn-on voltage of 2.8 V, a higher maximum current efficiency of 3.40 cd/A and a higher maximum power efficiency of 1.91 lm/W, which are superior to those of the conventional device （turn-on voltage of 3.8 V, maximum current efficiency of 2.60 cd/A, and maximum power efficiency of 1.21 lm/W）. We systematically studied the effects of different kinds of N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine （NPB）：ZnPc c-HTL. Meanwhile, we also investigate their mechanisms different from that in the case of using ZnPc as buffer layer. The specific analysis is based on the absorption spectra of the hole transporting material and current density–voltage characteristics of the corresponding hole-only devices.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2010CB327701the National Natural Science Foundation of China under Grant Nos 60977024 and 60907021.
文摘We report on a white hybrid light-emitting device employing a mixture of ternary CdSe/ZnS quantum dots(QDs)as an emitting layer(EML)and a small molecular material tris(8-hydroxyquinoline)aluminum(Alq3)as an electron-transporting layer.The film morphology of the spin-coated mixture of QDs is strongly improved via thermal annealing,and therefore a close-packed QD-EML is realized between organic charge-transporting layers.As a result,compared to the device with an unannealed QD-EML,the emission of Alq3 is deeply suppressed.In addition,a maximum luminance of more than 1000 cd/m2 and a maximum luminous efficiency of 2.2 cd/A are achieved.
基金Project supported by the National Key Basic Research and Development Program of China(Grant No.2010CB327701)the National Natural Science Foundation of China(Grant No.61275033)
文摘We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optimum ris-（8-hydroxyquinoline）aluminum （Alq3）-based organic light-emitting diode with a c-HTL exhibits a lower turn-on voltage of 2.8 V, a higher maximum current efficiency of 3.40 cd/A and a higher maximum power efficiency of 1.91 lm/W, which are superior to those of the conventional device （turn-on voltage of 3.8 V, maximum current efficiency of 2.60 cd/A, and maximum power efficiency of 1.21 lm/W）. We systematically studied the effects of different kinds of N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine （NPB）：ZnPc c-HTL. Meanwhile, we also investigate their mechanisms different from that in the case of using ZnPc as buffer layer. The specific analysis is based on the absorption spectra of the hole transporting material and current density–voltage characteristics of the corresponding hole-only devices.
