The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size a...The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.展开更多
The carrier mobility of two-dimensional tetragonal carbon allotrope （T-CA） from porous graphene is investigated by first-principles calculations. T-CA can be constructed from divacancy and Stone-Thrower--Wales defec...The carrier mobility of two-dimensional tetragonal carbon allotrope （T-CA） from porous graphene is investigated by first-principles calculations. T-CA can be constructed from divacancy and Stone-Thrower--Wales defects from graphene. T-CA is a direct semiconductor with a band gap of 0.4 eV at F point. T-CA possesses a high carrier mobility of the order of 104 cm2V-ls-1. As our study demonstrates, T-CA has potential applications for next-generation electronic materials.展开更多
The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light...The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.展开更多
A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage laye...A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.展开更多
Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the...Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.展开更多
GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricat...GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61176124the National Basic Research Program of China under Grant No 2010CB934201the Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.
基金Supported by the Fundamental Research Funds for the Central Universitiesthe Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe National Natural Science Foundation of China under Grant No 11204123
文摘The carrier mobility of two-dimensional tetragonal carbon allotrope （T-CA） from porous graphene is investigated by first-principles calculations. T-CA can be constructed from divacancy and Stone-Thrower--Wales defects from graphene. T-CA is a direct semiconductor with a band gap of 0.4 eV at F point. T-CA possesses a high carrier mobility of the order of 104 cm2V-ls-1. As our study demonstrates, T-CA has potential applications for next-generation electronic materials.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174135 and 60976016)the National 973 Project,China(Gant No.0213117005)+3 种基金the State Key Program for Basic Research of China(Grant No.2010CB630704)the Science Foundation of Henan Province,China(Grant No.14A430020)the Science Foundation of Henan University,China(Grant No.SBGJ090503)China Postdoctoral Science Foundation(Grant No.2012M511250)
文摘The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.
基金Supported by the National Natural Science Foundation of China under Grand Nos 61176124 and 11204123, and the National Basic Research Program of China under Grant No 2010CB934201.
文摘A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.
基金Supported by the State Key Program for Basic Research of China under Grant No 2010CB630704, the National Natural Science Foundation of China under Grant No 11174135, the Fundamental Research Funds for the Central Universities under Grant Nos 1095021336 and 1092021307, and the Fund of Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.
基金the National Natural Science Foundation of China under Grant Nos 51072078 and 61076008the National Basic Research Program of China under Grant No 2010CB630704the College Graduate Research and Innovation Project of Jiangsu Province under Grant No CXZZ12_0050.
文摘GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).
