The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） m...The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2× 10^18 cm^-3 and 8× 10^18 cm^-3with a carrier mobility of 30-55 cm2/（V.s） for ntype 4H-SiC substrates and 1× 10^16 -3× 10^16 cm^-3 with mobility of 290-490 cm2/（V.s） for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10^16 cm^-3 with mobility of 380 cm2/（V.s）. It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.展开更多
We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that...We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.展开更多
Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial g...Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.展开更多
High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source tog...High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C;H;） as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×10;cm;.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.展开更多
A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor.The Al depth profile was almost box shaped with a height of 1×10...A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor.The Al depth profile was almost box shaped with a height of 1×10^（19）cm^（-3） and a depth of 550 nm.Three different annealing processes were developed to protect the wafer surface.Variations in RMS roughness have been measured and compared with each other.The implanted SiC, annealed with a carbon cap,maintains a high-quality surface with an RMS roughness as low as 3.8 nm.Macrosteps and terraces were found in the SiC surface,which annealed by the other two processes（protect in Ar/protect with SiC capped wafer in Ar）.The RMS roughness is 12.2 nm and 6.6 nm,respectively.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60876003)the Knowledge Innovation Project of Chinese Academy of Sciences (Grant Nos. Y072011000 and ISCAS2008T04)the Science and Technology Projects of the State Grid Corporation of China (ZL71-09-001)
文摘The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phono-plasmon coupled （LOPC） modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2× 10^18 cm^-3 and 8× 10^18 cm^-3with a carrier mobility of 30-55 cm2/（V.s） for ntype 4H-SiC substrates and 1× 10^16 -3× 10^16 cm^-3 with mobility of 290-490 cm2/（V.s） for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10^16 cm^-3 with mobility of 380 cm2/（V.s）. It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
基金Project supported by the National Natural Science Foundation of China(No60876003)the Chinese Academy of Sciences(No Y072011000)+1 种基金the Beijing Municipal Science&Technology Commission(NoD09080300500903)the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)
文摘We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60876003 and 60606003)the Science Foundation of the Chinese Academy of Sciences(Grant No.yz200702)
文摘Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.
基金Project supported by the National Natural Science Foundation of China(No60876003)the Chinese Academy of Sciences(No Y072011000)+1 种基金the Beijing Municipal Science & Technology Commission(NoD09080300500903)the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)
文摘High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C;H;） as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×10;cm;.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.
基金Project supported by the National Natural Science Foundation of China(No.60876003)the Chinese Academy of Sciences(No. Y072011000)+1 种基金the Beijing Municipal Science & Technology Commission(No.D09080300500903)the Knowledge Innovation Program of the Chinese Academy of Sciences(No.ISCAS2008T04)
文摘A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor.The Al depth profile was almost box shaped with a height of 1×10^（19）cm^（-3） and a depth of 550 nm.Three different annealing processes were developed to protect the wafer surface.Variations in RMS roughness have been measured and compared with each other.The implanted SiC, annealed with a carbon cap,maintains a high-quality surface with an RMS roughness as low as 3.8 nm.Macrosteps and terraces were found in the SiC surface,which annealed by the other two processes（protect in Ar/protect with SiC capped wafer in Ar）.The RMS roughness is 12.2 nm and 6.6 nm,respectively.
