FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurre...FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.展开更多
Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technology,respectively.Off-state breakdown characteristics of these devices are presented with and without body contact...Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technology,respectively.Off-state breakdown characteristics of these devices are presented with and without body contact,respectively.By means of two-dimension(2D) device simulation and measuring junction breakdown of the drain and the body,the difference and limitation of the breakdown characteristics of devices with two technologies are analyzed and explained in details.Based on this,a method is proposed to improve off-state breakdown characteristics of PDSOI nMOS devices.展开更多
文摘FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.
文摘Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technology,respectively.Off-state breakdown characteristics of these devices are presented with and without body contact,respectively.By means of two-dimension(2D) device simulation and measuring junction breakdown of the drain and the body,the difference and limitation of the breakdown characteristics of devices with two technologies are analyzed and explained in details.Based on this,a method is proposed to improve off-state breakdown characteristics of PDSOI nMOS devices.
