Spherical Bi2O3 powder prepared by plasma chemical vapor reaction and aqueous chemical precipitation is studied. The superfine spherical Bi2O3 powder with an average diameter of 1 μm is made by plasma process. During...Spherical Bi2O3 powder prepared by plasma chemical vapor reaction and aqueous chemical precipitation is studied. The superfine spherical Bi2O3 powder with an average diameter of 1 μm is made by plasma process. During the precipitation process, the micrograph of the Bi2O3 powder can be controlled through the reaction temperature, the rate of addition of the precipitation reagent, the reaction time and the amount of the dispersant. Accordingly, spherical Bi2O3 powder with diameters ranging from 2μm to 3μm is prepared. The spherical Bi2O3 particles have such advantages as uniform size distribution and excellent dispersing property. ZnO varistors made from the resultant powder exhibit properties of a low discharge voltage ratio, great eligibility coefficient measured by a rectangle wave of 2 ins 800 A and good stability in the above characteristics.展开更多
基金Technology Innovation Foundation of Middle-minor Enterprises of Science and Technology from Ministryof Science and Technology (No. 19995103020074, 20003403023018)
文摘Spherical Bi2O3 powder prepared by plasma chemical vapor reaction and aqueous chemical precipitation is studied. The superfine spherical Bi2O3 powder with an average diameter of 1 μm is made by plasma process. During the precipitation process, the micrograph of the Bi2O3 powder can be controlled through the reaction temperature, the rate of addition of the precipitation reagent, the reaction time and the amount of the dispersant. Accordingly, spherical Bi2O3 powder with diameters ranging from 2μm to 3μm is prepared. The spherical Bi2O3 particles have such advantages as uniform size distribution and excellent dispersing property. ZnO varistors made from the resultant powder exhibit properties of a low discharge voltage ratio, great eligibility coefficient measured by a rectangle wave of 2 ins 800 A and good stability in the above characteristics.
