Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes(LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition(MOCVD) with different doping concentrations a...Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes(LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition(MOCVD) with different doping concentrations and Al contents in Al_xGa_(1-x)As compound.And their optoelectric properties show that the optimal design for tunneling region corresponds to P^(++) layer with hole concentration up to 1×10^(20) cm^(-3), N^(++) layer electron concentration up to 5×10^(19) cm^(-3) and constituent Al_(0.2)Ga_(0.8)As in the tunneling junction region.The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction(12 mW).Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.展开更多
基金supported by the National Key Research and Development Program of China(No.2017YFB0403101)the National Natural Science Foundation of China(No.61474096)
文摘Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes(LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition(MOCVD) with different doping concentrations and Al contents in Al_xGa_(1-x)As compound.And their optoelectric properties show that the optimal design for tunneling region corresponds to P^(++) layer with hole concentration up to 1×10^(20) cm^(-3), N^(++) layer electron concentration up to 5×10^(19) cm^(-3) and constituent Al_(0.2)Ga_(0.8)As in the tunneling junction region.The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction(12 mW).Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.
