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Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)
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作者 张鑫 江志诚 +9 位作者 袁健 王霞 余娜 邹志强 刘正太 夏威 于振海 沈大伟 郭艳峰 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期422-426,共5页
The van der Waals(vdW)MnSb4Te7is a newly synthesized antiferromagnetic(AFM)topological insulator hosting a robust axion insulator state irrelative to the specific spin structure.However,the intrinsic hole doped charac... The van der Waals(vdW)MnSb4Te7is a newly synthesized antiferromagnetic(AFM)topological insulator hosting a robust axion insulator state irrelative to the specific spin structure.However,the intrinsic hole doped character of MnSb_4Te_7makes the Fermi level far away from the Dirac point of about 180 meV,which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect(QAHE).To shift up the Fermi level close to the Dirac point,the strategy of partially replacing Sb with Bi as Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)was tried and the magnetotransport properties,in particular,the anomalous Hall effect,were measured and analyzed.Through the electron doping,the anomalous Hall conductanceσAH changes from negative to positive between x=0.3 and 0.5,indicative of a possible topological transition.Besides,a charge neutrality point(CNP)also appears between x=0.6 and 0.7.The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism,as well as for the exploration of exotic topological properties. 展开更多
关键词 anomalous Hall effect DOPING topological materials
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