Devices with copper phthalocyanine（CuPc）：molybdenum trioxide（MoO3） co-evaporated layer were fabricated and the current–voltage（I–V） and capacitance–voltage（C–V） characteristics were measured. It has been ...Devices with copper phthalocyanine（CuPc）：molybdenum trioxide（MoO3） co-evaporated layer were fabricated and the current–voltage（I–V） and capacitance–voltage（C–V） characteristics were measured. It has been found that for a given voltage, the current of the device with a co-evaporated layer is higher than those without the co-evaporated layer and it reaches the highest value if the ratio of MoO3 to CuPc is 1：1. Meanwhile, the C–V characteristics showed that only free holes exist in the function layer consisting of pure CuPc. However, charge transfer（CT） complexes exist in the function layer of a CuPc：MoO3 mixture. The charge transfer complexes do not contribute to the transport of the device efficiently under low applied fields but are disassociated into free carriers rapidly at applied fields higher than 1.7×105V/cm, which greatly increases the conductivity.展开更多
基金Project supported by the Science and Technology Commission of Shanghai Municipality,Chinathe National Science and Technology Major Project of the Ministry of Science and Technology of Chinathe National Natural Science Foundation of China
文摘Devices with copper phthalocyanine（CuPc）：molybdenum trioxide（MoO3） co-evaporated layer were fabricated and the current–voltage（I–V） and capacitance–voltage（C–V） characteristics were measured. It has been found that for a given voltage, the current of the device with a co-evaporated layer is higher than those without the co-evaporated layer and it reaches the highest value if the ratio of MoO3 to CuPc is 1：1. Meanwhile, the C–V characteristics showed that only free holes exist in the function layer consisting of pure CuPc. However, charge transfer（CT） complexes exist in the function layer of a CuPc：MoO3 mixture. The charge transfer complexes do not contribute to the transport of the device efficiently under low applied fields but are disassociated into free carriers rapidly at applied fields higher than 1.7×105V/cm, which greatly increases the conductivity.
