能量分辨率是γ射线探测器关键技术指标之一,直接关联γ射线全能峰的尖锐程度、分离程度,从而影响全能峰被识别、区分的能力。提高γ探测器的能量分辨率,是γ探测器发展的一个重要方向,近年发展起来的超高分辨γ射线探测器,能达到25 e V...能量分辨率是γ射线探测器关键技术指标之一,直接关联γ射线全能峰的尖锐程度、分离程度,从而影响全能峰被识别、区分的能力。提高γ探测器的能量分辨率,是γ探测器发展的一个重要方向,近年发展起来的超高分辨γ射线探测器,能达到25 e V@103 ke V的能量分辨率,其相对目前能量分辨率最好的高纯锗探测器的能量分辨率高一个数量级,因此超高分辨超导γ射线探测器成为了一大研究热点。为了推动超高分辨率γ探测器关键技术的实验研究,利用MCNP5采用了不同能量的射线源、不同规格的吸收体以及不同的支撑环境对超高分辨超导γ射线探测器的探测结果进行了模拟。这些模拟对于探测器的模型优化以及谱仪的设计有重要的指导作用。展开更多
A high-efficiency fast neutron detector prototype based on a triple Gas Electron Multiplier（GEM） detector, which, coupled with a novel multi-layered high-density polyethylene（HDPE） as a neutron-to-proton converter...A high-efficiency fast neutron detector prototype based on a triple Gas Electron Multiplier（GEM） detector, which, coupled with a novel multi-layered high-density polyethylene（HDPE） as a neutron-to-proton converter for improving the neutron detection efficiency, is introduced and tested with the Am-Be neutron source in the Institute of Modern Physics（IMP） at Lanzhou in the present work. First, the developed triple GEM detector is tested by measuring its effective gain and energy resolution with55 Fe X-ray source to ensure that it has a good performance.The effective gain and obtained energy resolution is 5.0×104and around 19.2%, respectively. Secondly, the novel multi-layered HDPE converter is coupled with the cathode of the triple GEM detector making it a high-efficiency fast neutron detector. Its effective neutron response is four times higher than that of the traditional single-layered conversion technique when the converter layer number is 38.展开更多
Bilayer superconducting films with tunable transition temperature（Tc） are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, ...Bilayer superconducting films with tunable transition temperature（Tc） are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium（Ti/In） bilayer superconducting films are successfully fabricated on SiO2/Si（001）substrates by molecular beam epitaxy（MBE）. The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150？C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.展开更多
文摘能量分辨率是γ射线探测器关键技术指标之一,直接关联γ射线全能峰的尖锐程度、分离程度,从而影响全能峰被识别、区分的能力。提高γ探测器的能量分辨率,是γ探测器发展的一个重要方向,近年发展起来的超高分辨γ射线探测器,能达到25 e V@103 ke V的能量分辨率,其相对目前能量分辨率最好的高纯锗探测器的能量分辨率高一个数量级,因此超高分辨超导γ射线探测器成为了一大研究热点。为了推动超高分辨率γ探测器关键技术的实验研究,利用MCNP5采用了不同能量的射线源、不同规格的吸收体以及不同的支撑环境对超高分辨超导γ射线探测器的探测结果进行了模拟。这些模拟对于探测器的模型优化以及谱仪的设计有重要的指导作用。
基金Supported by National Natural Science Foundation of China(11135002,11305232,11175076)
文摘A high-efficiency fast neutron detector prototype based on a triple Gas Electron Multiplier（GEM） detector, which, coupled with a novel multi-layered high-density polyethylene（HDPE） as a neutron-to-proton converter for improving the neutron detection efficiency, is introduced and tested with the Am-Be neutron source in the Institute of Modern Physics（IMP） at Lanzhou in the present work. First, the developed triple GEM detector is tested by measuring its effective gain and energy resolution with55 Fe X-ray source to ensure that it has a good performance.The effective gain and obtained energy resolution is 5.0×104and around 19.2%, respectively. Secondly, the novel multi-layered HDPE converter is coupled with the cathode of the triple GEM detector making it a high-efficiency fast neutron detector. Its effective neutron response is four times higher than that of the traditional single-layered conversion technique when the converter layer number is 38.
文摘Bilayer superconducting films with tunable transition temperature（Tc） are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium（Ti/In） bilayer superconducting films are successfully fabricated on SiO2/Si（001）substrates by molecular beam epitaxy（MBE）. The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150？C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.
