The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of n...The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non- ballistic （with scattering） channel Si-diodes is compared with that of ballistic （without scattering） channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in the unstrained model, and the values of the velocity and the current in the ballistic channel model are higher than the respective values in the non-ballistic channel model. In the strain and scattering models, the effect of each carrier scattering mechanism on the performance of the Si- diodes is analyzed in the drain region. For the ballistic channel model, our results show that inter-valley optical phonon scattering improves device performance, whereas intra-valley acoustic phonon scattering degrades device performance. For the strain model, our results imply that the larger energy splitting of the strained Si could suppress the inter-valley phonon scattering rate. In conclusion, for the drain region, investigation of the strained-Si and scattering mechanisms are necessary, in order to improve the performance of nanoscale ballistic regime devices.展开更多
基金supported by the National Natural Science Foundation of China(No.61366001)the National Basic Research Program of China(No.2011CB706601)
文摘The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non- ballistic （with scattering） channel Si-diodes is compared with that of ballistic （without scattering） channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in the unstrained model, and the values of the velocity and the current in the ballistic channel model are higher than the respective values in the non-ballistic channel model. In the strain and scattering models, the effect of each carrier scattering mechanism on the performance of the Si- diodes is analyzed in the drain region. For the ballistic channel model, our results show that inter-valley optical phonon scattering improves device performance, whereas intra-valley acoustic phonon scattering degrades device performance. For the strain model, our results imply that the larger energy splitting of the strained Si could suppress the inter-valley phonon scattering rate. In conclusion, for the drain region, investigation of the strained-Si and scattering mechanisms are necessary, in order to improve the performance of nanoscale ballistic regime devices.
