Selective laser melting(SLM)can efficiently fabricate metallic components with complex shapes and offers new opportunities for the structural optimization of lightweight components[1].Owing to the high cooling rate(10...Selective laser melting(SLM)can efficiently fabricate metallic components with complex shapes and offers new opportunities for the structural optimization of lightweight components[1].Owing to the high cooling rate(10^(3)-10^(6)Ks^(-1))of the SLM process,the solidified SLM-fabricated metals show a unique microstructure with highly supersaturated solid solutions that are well beyond the normal solubility limits of most elements.This leads to significant improvements in the mechanical properties of the SLM-fabricated materials[2].展开更多
制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管,对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明,随着衬底温度(T_(sub))的增加,器件载流子迁移率(μ)、光暗电流比(P)和光响应度(R)先增加后减小,在T_(sub)=140℃时达到最大。T_(sub)...制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管,对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明,随着衬底温度(T_(sub))的增加,器件载流子迁移率(μ)、光暗电流比(P)和光响应度(R)先增加后减小,在T_(sub)=140℃时达到最大。T_(sub)=140℃的ITO衬底器件,在波长808 nm、光功率密度190 m W·cm^(-2)的近红外光照下,最大载流子迁移率达到1.35×10^(-2)cm^2·V^(-1)·s^(-1),最大光暗电流比为250,栅压为-50 V时的最大光响应度为1.51 m A/W。展开更多
基金supported by the National Natural Science Foundation of China (51801079 and 52001140)the Natural Science Foundation for Young Scientists of Jiangsu, China (BK20180985 and BK20180987)。
文摘Selective laser melting(SLM)can efficiently fabricate metallic components with complex shapes and offers new opportunities for the structural optimization of lightweight components[1].Owing to the high cooling rate(10^(3)-10^(6)Ks^(-1))of the SLM process,the solidified SLM-fabricated metals show a unique microstructure with highly supersaturated solid solutions that are well beyond the normal solubility limits of most elements.This leads to significant improvements in the mechanical properties of the SLM-fabricated materials[2].
文摘制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管,对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明,随着衬底温度(T_(sub))的增加,器件载流子迁移率(μ)、光暗电流比(P)和光响应度(R)先增加后减小,在T_(sub)=140℃时达到最大。T_(sub)=140℃的ITO衬底器件,在波长808 nm、光功率密度190 m W·cm^(-2)的近红外光照下,最大载流子迁移率达到1.35×10^(-2)cm^2·V^(-1)·s^(-1),最大光暗电流比为250,栅压为-50 V时的最大光响应度为1.51 m A/W。
