Memristors are designed to mimic the brain’s integrated functions of storage and computing,thus breaking through the von Neumann framework.However,the formation and breaking of the conductive filament inside a conven...Memristors are designed to mimic the brain’s integrated functions of storage and computing,thus breaking through the von Neumann framework.However,the formation and breaking of the conductive filament inside a conventional memristor is unstable,which makes it difficult to realistically mimic the function of a biological synapse.This problem has become a main factor that hinders memristor applications.The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film.In this work,an Au/Hf0.5Zr0.5O2/p+-Si ferroelectric memristor is proposed,which is capable of achieving resistive switching characteristics.In particular,the proposed device realizes the stable characteristics of multilevel storage,which possesses the potential to be applied to multi-level storage.Through polarization,the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains.Additionally,a plurality of resistance states can be obtained in bidirectional continuous reversibility,which is similar to the changes in synaptic weights.Furthermore,the proposed memristor is able to successfully mimic biological synaptic functions such as long-term depression,long-term potentiation,paired-pulse facilitation,and spike-timing-dependent plasticity.Consequently,it constitutes a promising candidate for a breakthrough in the von Neumann framework.展开更多
The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, unif...The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, uniformity, and power consumption of memristors are still challenging in neuromorphic computing. Here an Au/SnSe/graphene/SiO_(2)/Si memristor was fabricated, incorporating two-dimensional graphene with high thermal conductivity. The device not only exhibits excellent electrical characteristics(e.g., high stability,good uniformity and a high ROFF/RON ratio), but also can implement biological synaptic functions such as paired-pulse facilitation, short-term plasticity and long-term plasticity. Its set and reset power values can be as low as 16.7 and 2.3 nW,respectively. Meanwhile, the resistance switching mechanism for the device, which might be associated with the formation and rupture of a filamentary conducting path consisting of Sn vacancies, was confirmed by high-resolution transmission electron microscopy observations. The proposed device is an excellent candidate for use in high-density storage and lowpower neuromorphic computing applications.展开更多
基金the National Natural Science Foundation of China(61674050 and 61874158)the Outstanding Youth Project of Hebei Province(F2016201220)+6 种基金the Outstanding Youth Cultivation Project of Hebei University(2015JQY01)the Training and Introduction of High-level Innovative Talents of Hebei University(801260201300)the Project of Science and Technology Activities for Overseas Researcher(CL 201602)the Project of Distinguished Young of Hebei Province(A2018201231)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Hundred Persons Plan of Hebei Province(E2018050004 and E2018050003)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)。
文摘Memristors are designed to mimic the brain’s integrated functions of storage and computing,thus breaking through the von Neumann framework.However,the formation and breaking of the conductive filament inside a conventional memristor is unstable,which makes it difficult to realistically mimic the function of a biological synapse.This problem has become a main factor that hinders memristor applications.The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film.In this work,an Au/Hf0.5Zr0.5O2/p+-Si ferroelectric memristor is proposed,which is capable of achieving resistive switching characteristics.In particular,the proposed device realizes the stable characteristics of multilevel storage,which possesses the potential to be applied to multi-level storage.Through polarization,the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains.Additionally,a plurality of resistance states can be obtained in bidirectional continuous reversibility,which is similar to the changes in synaptic weights.Furthermore,the proposed memristor is able to successfully mimic biological synaptic functions such as long-term depression,long-term potentiation,paired-pulse facilitation,and spike-timing-dependent plasticity.Consequently,it constitutes a promising candidate for a breakthrough in the von Neumann framework.
基金financially supported by the National Natural Science Foundation of China (51972094,61674050 and 61874158)the Outstanding Youth Project of Hebei Province (F2016201220)+3 种基金the Project of Science and Technology Activities for Overseas Researcher (CL201602)the Project of Distinguished Youth of Hebei Province (A2018201231)the Support Program for the Top Young Talents of Hebei Province (70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (SLRC2019018)。
文摘The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, uniformity, and power consumption of memristors are still challenging in neuromorphic computing. Here an Au/SnSe/graphene/SiO_(2)/Si memristor was fabricated, incorporating two-dimensional graphene with high thermal conductivity. The device not only exhibits excellent electrical characteristics(e.g., high stability,good uniformity and a high ROFF/RON ratio), but also can implement biological synaptic functions such as paired-pulse facilitation, short-term plasticity and long-term plasticity. Its set and reset power values can be as low as 16.7 and 2.3 nW,respectively. Meanwhile, the resistance switching mechanism for the device, which might be associated with the formation and rupture of a filamentary conducting path consisting of Sn vacancies, was confirmed by high-resolution transmission electron microscopy observations. The proposed device is an excellent candidate for use in high-density storage and lowpower neuromorphic computing applications.
基金supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the National Natural Science Foundation of China(62004056,61874158,and 62104058)+12 种基金the Cultivation Projects of National Major R&D Project(92164109)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University(DXK202101)the Institute of Life Sciences and Green Development(521100311)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the Advanced Talents Incubation Program of the Hebei University(521000981426,521100221071,and 521000981363)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)Baoding Science and Technology Plan Project(2172P011)。