We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl...We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.展开更多
Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at ...Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.展开更多
基金Supported by the High Level Talents Project of Hainan Basic and Applied Research Program(Natural Science)(Grant No.2019RC118)the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in DICP(Grant No.SKLMRD-K202005).
文摘We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.
基金Supported by the National Natural Science Foundation of China under Grant No 50532080, and the Key Laboratory Projects of the Education Department of Liaoning Province under Grant No 20060131.
文摘Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.
