为探讨C rT iA lN镀层高硬度、低磨损机理,应用UDP850/4镀层设备,在高速钢和单晶硅基体上制备了C rT iA lN复合镀层,并测试了其力学性能和摩擦学性能,采用XRD、SEM、TEM等手段对镀层微观组织结构进行了分析。结果表明:在75 V负偏压下沉...为探讨C rT iA lN镀层高硬度、低磨损机理,应用UDP850/4镀层设备,在高速钢和单晶硅基体上制备了C rT iA lN复合镀层,并测试了其力学性能和摩擦学性能,采用XRD、SEM、TEM等手段对镀层微观组织结构进行了分析。结果表明:在75 V负偏压下沉积的镀层具有显微硬度高、摩擦系数小,磨损率低,膜/基结合和韧性良好;镀层由C rN、T iN、A lN、C r2N和T i2N等纳米晶组成;纳米晶粒弥散于非晶的结构是硬度增强的机理;良好的膜基结合、韧性好和低摩擦系数是镀层具有低磨损的原因。展开更多
Considering an optical bistable system with cross-correlated additive white noise and multiplicative colored noise, we study the effects of correlation between the noises on the correlation function C（s） using the u...Considering an optical bistable system with cross-correlated additive white noise and multiplicative colored noise, we study the effects of correlation between the noises on the correlation function C（s） using the unified colored noise approximation and the Stratonovich deeoupling ansatz formalism. The effects of the self-correlation time τ of the multiplicative colored noise and the correlation intensity λ between the two noises are studied with numerical calculation. It is found that C（s） increases with the increase of the self-correlation timeτ, but decreases with the increase of the correlation intensity λ. At large value of τ, there is almost no change for C（s） when τ changes.展开更多
基金supported by the Natural Science Foundation of Anhui Province,China,under Grant No.KJ2009B119Z.
文摘Considering an optical bistable system with cross-correlated additive white noise and multiplicative colored noise, we study the effects of correlation between the noises on the correlation function C（s） using the unified colored noise approximation and the Stratonovich deeoupling ansatz formalism. The effects of the self-correlation time τ of the multiplicative colored noise and the correlation intensity λ between the two noises are studied with numerical calculation. It is found that C（s） increases with the increase of the self-correlation timeτ, but decreases with the increase of the correlation intensity λ. At large value of τ, there is almost no change for C（s） when τ changes.
