采用氯化镉,氯化锌,硫脲,柠檬酸钠和氨水构成的溶液体系通过化学浴沉积法合成CdxZn1-xS薄膜,采用SEM、EDS、XRD和紫外可见近红外分光光度计等表征手段研究了CdxZn1-xS薄膜的形貌、组分、相结构和光学性能,测试了薄膜的光电流响应曲线进...采用氯化镉,氯化锌,硫脲,柠檬酸钠和氨水构成的溶液体系通过化学浴沉积法合成CdxZn1-xS薄膜,采用SEM、EDS、XRD和紫外可见近红外分光光度计等表征手段研究了CdxZn1-xS薄膜的形貌、组分、相结构和光学性能,测试了薄膜的光电流响应曲线进而对薄膜的光电性能进行了分析。结果表明,在65~85℃水浴温度下均可以制备CdxZn1-xS薄膜,随着水浴温度升高,薄膜中Zn的原子比例相对增加,光学带隙增大;制备的薄膜均显示了明显的光电导现象。75℃制备的薄膜的表面最为平整致密,结晶性最好,光学带隙为2.72 e V,光暗电导比为1.20;光源关闭后电流下降过程最快,关闭10 s后电流下降了约69.39%。展开更多
Specimens of PbTe single film are deposited on Ge substrates by vacuum thermal evaporation.During the temperature range of 80–300 K,the transmittance of a PbTe film within 2–15μm is measured every 20 K by the Perki...Specimens of PbTe single film are deposited on Ge substrates by vacuum thermal evaporation.During the temperature range of 80–300 K,the transmittance of a PbTe film within 2–15μm is measured every 20 K by the Perkin Elmer Fourier transform infrared spectroscopy cryogenic testing system.Then,the relationship between the refractive index and wavelength within 7–12μm at different temperatures is received by the full spectrum inversion method fitting.It can be seen that the relationship conforms to the Cauchy formula,which can be fitted.Then,the relationship between the refractive index of the PbTe film and the temperature/wavelength can be expressed as n（λ,T）=5.82840-0.00304T＋4.61458×10-6T2＋8.00280∕λ2＋0.21544∕λ4,which is obtained by the fitting method based on the Cauchy formula.Finally,the designed value obtained by the formula and the measured spectrum are compared to verify the accuracy of the formula.展开更多
TB43 2002021346用于铁电存储器的 PZT 薄膜的制备与性能=Proper-ties of PZT thin films prepared by MOD methodfor ferroelectric memories[刊,中]/林殷茵,汤庭螯,黄维宁,宋浩然(复旦大学电子工程系微电子所.上海(200433))∥固体电...TB43 2002021346用于铁电存储器的 PZT 薄膜的制备与性能=Proper-ties of PZT thin films prepared by MOD methodfor ferroelectric memories[刊,中]/林殷茵,汤庭螯,黄维宁,宋浩然(复旦大学电子工程系微电子所.上海(200433))∥固体电子学研究与进展.—2001,21(2).—234-238。展开更多
The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate p...The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.展开更多
Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an app...Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.展开更多
The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous...The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature （HPHT） using the as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.展开更多
文摘采用氯化镉,氯化锌,硫脲,柠檬酸钠和氨水构成的溶液体系通过化学浴沉积法合成CdxZn1-xS薄膜,采用SEM、EDS、XRD和紫外可见近红外分光光度计等表征手段研究了CdxZn1-xS薄膜的形貌、组分、相结构和光学性能,测试了薄膜的光电流响应曲线进而对薄膜的光电性能进行了分析。结果表明,在65~85℃水浴温度下均可以制备CdxZn1-xS薄膜,随着水浴温度升高,薄膜中Zn的原子比例相对增加,光学带隙增大;制备的薄膜均显示了明显的光电导现象。75℃制备的薄膜的表面最为平整致密,结晶性最好,光学带隙为2.72 e V,光暗电导比为1.20;光源关闭后电流下降过程最快,关闭10 s后电流下降了约69.39%。
文摘Specimens of PbTe single film are deposited on Ge substrates by vacuum thermal evaporation.During the temperature range of 80–300 K,the transmittance of a PbTe film within 2–15μm is measured every 20 K by the Perkin Elmer Fourier transform infrared spectroscopy cryogenic testing system.Then,the relationship between the refractive index and wavelength within 7–12μm at different temperatures is received by the full spectrum inversion method fitting.It can be seen that the relationship conforms to the Cauchy formula,which can be fitted.Then,the relationship between the refractive index of the PbTe film and the temperature/wavelength can be expressed as n（λ,T）=5.82840-0.00304T＋4.61458×10-6T2＋8.00280∕λ2＋0.21544∕λ4,which is obtained by the fitting method based on the Cauchy formula.Finally,the designed value obtained by the formula and the measured spectrum are compared to verify the accuracy of the formula.
文摘TB43 2002021346用于铁电存储器的 PZT 薄膜的制备与性能=Proper-ties of PZT thin films prepared by MOD methodfor ferroelectric memories[刊,中]/林殷茵,汤庭螯,黄维宁,宋浩然(复旦大学电子工程系微电子所.上海(200433))∥固体电子学研究与进展.—2001,21(2).—234-238。
基金The research was supported by the Major Research Plan of Wuhan City(961001005-1)the Open Fund of State Key Laboratory for SimulationDie Technology in Huazhong Univ.of Sci.&Tech.(99-7)
文摘The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.
基金Supported by China Postdoctoral Science Foundation under Grant No 2005037539, and the National High Technology Programme of China under Grant No 2004AA513020.
文摘Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.
基金Supported by the National Natural Science Foundation of China under Grant No 50572032.
文摘The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature （HPHT） using the as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.
