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SiO_(2)微悬臂梁制备及力学仿真

Fabrication of SiO_(2) Microcantilever and Its Mechanical Simulation
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摘要 利用KOH湿法腐蚀法制备SiO_(2)微悬臂梁时,发现腐蚀掩膜边缘与(100)硅片主参考面成45°角的微悬梁结构底部有未完全掏蚀和过完全掏蚀的情况.借助COMSOL Multiphysics仿真软件对微悬臂梁结构从未完全掏蚀到过完全掏蚀的三维模型进行模态分析和静态分析.通过不同的加载形式模拟梁静态工作模式和受残余应力影响下的应力集中情况.结果表明:微悬臂梁的模态频率随着掏蚀过程的进行而减小;梁静态工作模式下,位移随掏蚀过程的进行而增大,体最大Von Mises应力先增大后减小,到完全掏蚀时达到最小值;受残余应力影响下的应力集中情况用K1和K2两种指标体现,结果均与载荷大小无关,与微梁尺寸有关,且K2指标更具规律性. When SiO_(2) microcantilever was prepared by the method of KOH wet etching,incomplete or over-complete undercutting was found at the bottom of the microcantilever structure with the etching mask edge at 45°from(100)silicon wafer’s main reference surface.With the help of COMSOL multiphysics simulation software,modal analysis and static analysis are carried out on the three-dimensional model of microcantilever structure which has incompletely undercut to over completely undercut.The static working mode of the microcantilever and the stress concentration under the influence of residual stress are simulated by different loading forms.The results show that the modal frequency of the microcantilever decreases with the undercutting process.Under the static mode,the displacement increases with the process of undercutting,and the maximum Von Mises stress on volume increases firstly and then decreases to the minimum vaule at the time of complete undercutting.The stress concentration under the influence of residual stress was reflected by two indexes K1 and K2,the results were not related to the load size but related to the size of the microcantilever,and the K2 index was more regular.
作者 李梦一 许昌华 LI Mengyi;XU Changhua(School of Mechanical Engineering, Yangzhou University, Yangzhou 225127, China)
出处 《测试技术学报》 2021年第5期375-380,385,共7页 Journal of Test and Measurement Technology
基金 国家自然科学基金资助项目(11372269)。
关键词 湿法腐蚀 SiO_(2)微悬臂梁 模态频率 Von Mises应力 应力集中 wet etching SiO_(2)microcantilever modal frequency Von Mises stress stress concentration

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