摘要
本工作采用真空热压烧结的方法,研究Mo2Ga2C粉体的烧结性能,制备致密的Mo2Ga2C块体材料,并且表征所制备材料的微观结构。实验发现750℃是合适的烧结温度,过高的烧结温度(850℃)会导致样品分解,主要产物为Mo2C。在750℃烧结过程中,随着烧结时间的延长,样品的晶粒没有明显长大,但是样品内部空隙显著变小,内部织构增强,相对密度明显提高。因为Mo2Ga2C晶体的片状结构,热压烧结过程中,部分片状晶粒会偏转,导致烧结样品的多数晶粒的(00l)晶面会倾向垂直于热压方向。在750℃烧结8 h,可以得到几乎完全致密(相对密度98.8%)的Mo2Ga2C块体材料。
Mo2Ga2C,a double-A-layer MAX,is reported to be films or powders.This paper researched the sintering properties of M2Ga2C powders to make dense bulk samples by vacuum hot pressing.It was found that 750℃was a suitable sintering temperature,while higher temperature(850℃)resulted in decomposition of Mo2Ga2C yielding to main product of Mo2C.During sintering process at 750℃,its grain size did not increase obviously with sintering time,meanwhile the size of pores decreased markedly and the relative density increased significantly with the increasing sintering time.Additionally,the hot-pressed samples had obvious texture.Due to layering,some grains changed their orientations during sintering,of which most of the(00l)planes in the hot-pressed samples preferred to be perpendicular to the direction of hot press.Almost fully densed Mo2Ga2C bulk(relative density:98.8%)was obtained by hot pressing at 750℃for 8 h.This advantage of the method suggested that it can serve as a promising preparation for Mo2Ga2C,a double-A-Layer MAX.
作者
金森
王作通
杜亚琼
胡前库
禹建功
周爱国
JIN Sen;WANG Zuo-Tong;DU Ya-Qiong;HU Qian-Ku;YU Jian-Gong;ZHOU Ai-Guo(School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China;School of Mechanical and Power Engineering,Henan Polytechnic University,Jiaozuo 454003,China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2020年第1期41-45,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(51772077)
河南省高校科技创新团队(19IRTSTHN027)
河南省自然科学基金(182300410228,182300410275)~~
