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添加剂对钙钛矿太阳能电池性能的影响 被引量:3

Effect of additive on performance of perovskite solar cells
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摘要 为了钝化甲胺铅碘(CH3NH3PbI3)钙钛矿薄膜表面的缺陷,在PbI2前驱液中引入氨基锂(LiNH_2)作为添加剂制备钙钛矿电池器件,对其电学性能、表面形貌、结晶性、紫外可见光谱和荧光光谱进行测试分析,考察不同质量分数LiNH_2对钙钛矿太阳能电池性能的影响。结果表明:LiNH_2含有孤对电子,能够钝化钙钛矿缺陷,有利于光生激子的解离,提高器件的光电效率及稳定性;当LiNH_2质量分数为2%时获得了最优的器件性能,与无添加剂的器件相比,钙钛矿电池器件的开路电压(Voc)从0.96 V提升至1.00 V,短路电流(Jsc)从18.47 mA/cm^2增加至20.24 mA/cm2,填充因子(FF)从0.53提高到0.63,光电转换效率(PCE)由9.4%提升至12.6%,器件没有回滞现象。 In order to passivate the defects of the CH3NH3PbI3 perovskite surface,LiNH2 as additive was added into the lead iodide precursor solutions to fabricate perovskite solar cells.The electrical properties,surface morphology,crystallinity,ultraviolet-visible spectra and fluorescence spectra of perovskite solar cells were tested.The effects of different mass fractions of LiNH2 on the performance of perovskite solar cells were investigated.The results show that LiNH2 containing lone pair electrons can passivate perovskite defect and is favorable to the dissociation of photo-excitons and improves the photoelectric efficiency and stability of the device.When the mass fraction of LiNH2 is 2%,the optimal device performance is obtained.Compared with the device without additive,the open circuit voltage(Voc)of the device is increased from 0.96 V to 1.00 V,the short circuit current(Jsc)is increased from 18.47 mA/cm^2 to 20.24 mA/cm^2,and the filling factor(FF)is increased from 0.53 to 0.63.As a result,the photoelectric conversion efficiency of perovskite solar cells increases from 9.4%to 12.6%and there is no hysteresis phenomenon is observed.
作者 储乐平 赵晓磊 杨利营 印寿根 CHU Le-ping;ZHAO Xiao-lei;YANG Li-ying;YIN Shou-gen(Special Equipment Division,China Offshore Oil Engineering Company Limited,Tianjin 300451,China;Key Laboratory of Display Materials and Photoelectric Devices of Education Ministry,Tianjin University of Technology,Tianjin 300384,China)
出处 《天津工业大学学报》 CAS 北大核心 2019年第2期27-31,共5页 Journal of Tiangong University
基金 国家十三五科技重大专项资助项目(2016ZX05057)
关键词 钙钛矿太阳能电池 界面修饰 添加剂 载流子传输 光电效率 perovskite solar cells interface engineering additive carrier transport photoelectric efficiency
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