摘要
应用MonteCarlo方法模拟千电子伏低能束作用下 ,不同衬底上不同薄膜背散射电子发射 .应用Mott散射截面和Joy方法修正的Bethe方程描述和计算低能电子在固体中弹性和非弹性散射 ,引入边界方程 ,修正穿越薄膜与衬底界面的电子散射路径 .计算分析了薄膜背散射系数 η随薄膜厚度D的变化和规律 ,以及不同情况下 η D线性区范围的分布及其定量结果Dmax.计算了背散射电子角分布和空间密度分布 .
The emission of backscattered electrons from an ultra-thin film on a substrate under the action of keV low-energy beams is simulated with Monte Carlo method. The mott cross-section and the modified Bethe equation are used to describe and calculate the elastic and inelastic scattering of electrons in solids, respectively. A boundary equation is introduced to modify the path of the scattered electrons traversing the interface between the film and substrate. The dependence of backscattering coefficient eta on the thickness D of the thin film, the distribution of the linear range of eta-D curve and corresponding quantitative result D-max are calculated and analyzed. The angular distribution and the spatial density distribution of the backscattered electrons on the film surface are also calculated.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第7期1506-1511,共6页
Acta Physica Sinica
