摘要
随着IC集成度的不断提高,电路中单粒子引起的多节点翻转现象愈加频繁。为了解决该问题,提出了一种可对两个电压节点翻转完全免疫的RS触发器电路。基于双互锁存储单元结构,设计了一个冗余度为4的前置RS触发器。将不相邻的两个输出节点连接到一个改进型C单元电路中,屏蔽了错误电压,最终输出电压不受单粒子翻转的影响。该RS触发器采用0.25μm2P4M商用标准CMOS工艺实现。对RS触发器中任意两个电路节点同时分别注入两个单粒子事件,进行了抗单粒子翻转的可靠性验证。Spectre仿真结果表明,该RS触发器能完全对两个单粒子事件免疫。与已发表的辐射加固触发器相比,该触发器采用的晶体管个数减少了20.8%,功耗降低了21.3%。
The multiple-node upset led by a single particle occurs more frequently,as the CMOS transistors' feature size becomes smaller and more transistors are integrated in the same area.In order to solve this problem,a novel RS flip-flop was proposed,which was immune to two-node.upset.Based on the dual interlocked cell,a pre-RS flip-flop with redundancy of four was designed.Two of its isolated output nodes were connected to an improved C- element circuit,which could shield final outputs from the influence of error signals.The proposed circuit was implemented in a 0.25 μm 2P4M commercial standard CMOS process.Two events were simultaneously injectedinto two circuit nodes respectively,and the reliability against the single event upset effect of the proposed flip-flop was verified.The results simulated by Spectre demonstrated that the proposed circuit was immune to two-node upset. Compared with that of a reported circuit,the transistor number and power dissipation of the proposed circuit were decreased by 20.8%and 21.3%respectively.
作者
王佳
李萍
郑然
魏晓敏
胡永才
WANG Jia;LI Ping;ZHENG Ran;WEI Xiaomin;HU Yongcai(College of Computer Science,Northwestern Polytechnical University,Xi'an 710072,P.R.China;University of Strasbourg,Strasbourg 67037,France)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第6期779-783,共5页
Microelectronics
基金
国家自然科学基金资助项目(61504108
61504109
11705148)
中央高校基本科研业务费专项资金项目(3102017zy028)
陕西省自然科学基金资助项目(2017JM6084)
关键词
单粒子效应
多节点翻转
辐射加固
RS触发器
single event effect
multiple-node upset
radiation hardness
RS flip-flop
