摘要
用高温固相反应法制备了镓掺杂的氧化锌导电陶瓷,研究了预烧温度、烧结温度和掺杂浓度等工艺条件;用射频磁控溅射方法分别在玻璃和石英基底上沉积了镓掺杂的氧化锌薄膜,研究了该薄膜在不同的基底温度和不同的氧氩比等条件下的光电性质的变化情况以及氮气氛下不同退火温度下的光电性质,结果表明:镓掺杂氧化锌薄膜在450℃的基底温度、2%的掺杂浓度和700℃的退火温度等条件下实现了0.84×10-4Ω.cm的低电阻率和大于90%的可见光透过率,其光学带隙随退火温度的上升也有一定程度的增大.
In this paper,Ga-doped zinc oxide（GZO） conductive ceramics were prepared by high temperature solid state reaction method and the process conditions（presinter temperature,sinter temperature and Ga-doping level） were investigated.Transparent conducting GZO thin films were prepared on glass and quartz substrates by magnetron sputtering respectively.The electrical resistivity and optical transparency of the GZO films have been investigated as a function of substrate deposition temperature,oxygen partial pressures and different annealing temperatures in nitrogen ambience.Experimental results show that GZO film with a low resistivity of approximately 8.4×10-5 Ω·cm and a visible light transitivity of greater than 90 % can be obtained using substrate deposition temperature of 450 ℃,Ga-doped level of 2 % and thermal annealing temperature of 700 ℃.The value of optical band gap of GZO increased with the rise of the annealing temperatures of the GZO thin film.
出处
《河南大学学报（自然科学版）》
CAS
北大核心
2012年第6期707-711,共5页
Journal of Henan University:Natural Science
基金
东莞市科技计划(高等院校
科研机构研发经费)资助项目(200910814032
2011108102025)
东莞理工学院创新人才项目(E3456108)
关键词
工艺条件
导电陶瓷
透明导电氧化物
镓掺杂氧化锌薄膜
射频磁控溅射
process conditions
conductive ceramics
transparent conducting oxide
ga-doped ZnO（GZO） films
radio frequency（RF） magnetron sputtering
